GaAs 基1.55 μm GaInNAs(Sb)、异变InGaAs 量子阱材料与激光器
| Contribuinte(s) |
牛智川 |
|---|---|
| Data(s) |
2008
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| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z Made available in DSpace on 2009-04-13T11:45:31Z (GMT). Made available in DSpace on 2009-07-09T01:37:09Z (GMT). No. of bitstreams: 1 disk/eh2008/wdh.pdf: 3586052 bytes, checksum: 67f857e1ec7946b8f651dd5120a77c58 (MD5) Previous issue date: 2008 |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
吴东海.GaAs 基1.55 μm GaInNAs(Sb)、异变InGaAs 量子阱材料与激光器.[博士].北京.中国科学院半导体研究所.2008 |
| Palavras-Chave | #微电子与固体电子学 |
| Tipo |
学位论文 |
