Computer program for designing optimal networks with MOS gates,

Thesis-University of Illinois at Urbana-Champaign.

Test patterns NBS-28 and NBS-28A : random fault interconnect step coverage and other structures /

S/N 003-003-02297-7.

A production-compatible microelectronic test pattern for evaluating photomask misalignment /

Includes bibliographical references.

Angular sensitivity of controlled implanted doping profiles /

Includes bibliographical references.

Automated photomask inspection /

Includes bibliographical references.

Characteristics of small-signal capacitances of silicon-on-sapphire MOSFETs

The measured inter-electrode capacitances of silicon-on-sapphire (SOS) MOSFETs are presented and compared with simulation results. It is shown that the variations of capacitances with DC bias differ from those of bulk MOSFETs due to change in body potential variation of the SOS device resulting from electron-hole pair generation through impact ionisation.

Experimental investigation of interface states and photovoltaic effects on the scanning capacitance microscopy measurement for p-n junction dopant profiling

Controlled polishing procedures were used to produce both uniformly doped and p-n junction silicon samples with different interface state densities but identical oxide thicknesses. Using these samples, the effects of interface states on scanning capacitance microscopy (SCM) measurements could be singled out. SCM measurements on the junction samples were performed with and without illumination from the atomic force microscopy laser. Both the interface charges and the illumination were seen to affect the SCM signal near p-n junctions significantly. SCM p-n junction dopant profiling can be achieved by avoiding or correctly modeling these two factors in the experiment and in the simulation. (c) 2005 American Institute of Physics.

A bang-bang PLL employing dynamic gain control for low jitter and fast lock times

Bang-bang phase detector based PLLs are simple to design, suffer no systematic phase error, and can run at the highest speed a process can make a working flip-flop. For these reasons designers are employing them in the design of very high speed Clock Data Recovery (CDR) architectures. The major drawback of this class of PLL is the inherent jitter due to quantized phase and frequency corrections. Reducing loop gain can proportionally improve jitter performance, but also reduces locking time and pull-in range. This paper presents a novel PLL design that dynamically scales its gain in order to achieve fast lock times while improving fitter performance in lock. Under certain circumstances the design also demonstrates improved capture range. This paper also analyses the behaviour of a bang-bang type PLL when far from lock, and demonstrates that the pull-in range is proportional to the square root of the PLL loop gain.