Characteristics of small-signal capacitances of silicon-on-sapphire MOSFETs
| Contribuinte(s) |
A. Kulikowski |
|---|---|
| Data(s) |
20/02/2003
|
| Resumo |
The measured inter-electrode capacitances of silicon-on-sapphire (SOS) MOSFETs are presented and compared with simulation results. It is shown that the variations of capacitances with DC bias differ from those of bulk MOSFETs due to change in body potential variation of the SOS device resulting from electron-hole pair generation through impact ionisation. |
| Identificador | |
| Idioma(s) |
eng |
| Publicador |
Institute of Electrical Engineers |
| Palavras-Chave | #Computer Science, Interdisciplinary Applications #Engineering, Electrical & Electronic #SOI #Silicon-on-insulator #C1 #290902 Integrated Circuits #671201 Integrated circuits and devices |
| Tipo |
Journal Article |
