Synthesis of GaN nanorods with vertebra-like morphology

GaN nanorods with vertebra-like morphology were synthesized by nitriding Ga2O3/ZnO films at 1000 degrees C for 20min. Ga2O3 thin films and ZnO middle layers were pre-deposited in turn on Si(111) substrates by r.f. magnetron sputtering system. In the flowing ammonia ambient, ZnO was reducted to Zn and Zu sublimated at 1000 degrees C. Ga2O3 was reducted to Ga2O and Ga2O reacted with NH3 to synthesize GaN nanorods in the help of the sublimation of Zn. The structure and morphology of the nanorods were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM), The composition of GaN nanorods was studied by energy dispersive spectroscopy (EDS) and fourier transform infrared (FTIR) system.

Spectroscopic ellipsometry study of In2O3 thin films

In2O3 films grown by helicon magnetron sputtering with different thicknesses were characterized by spectroscopic ellipsometry in the energy range from 1.5 to 5.0 eV. Aside from one amorphous sample prepared at room substrate temperature, polycrystalline In2O3 films with cubic crystal structure were confirmed for other four samples prepared at the substrate temperature of 450 A degrees C. Excellent SE fittings were realized by applying 1 and/or 2 terms F&B amorphous formulations, building double layered film configuration models, and further taking account of void into the surface layer based on Bruggeman effective medium approximation for thinner films. Spectral dependent refractive indices and extinction coefficients were obtained for five samples. The curve shapes were well interpreted according to the applied dispersion formulas. Almost similar optical band gap values from 3.76 to 3.84 eV were obtained for five samples by Tauc plot calculation using extinction coefficients under the assumption of direct allowed optical transition mode.

Structural studies of NixFe100-x/Mo magnetic multilayers by x-ray small-angle reflection and high-angle diffraction

Magnetic multilayers [NixFe100-x/Mo-30] grown by dc-magnetron sputtering were investigated by x-ray small-angle reflection and high-angle diffraction. Structural parameters of the multilayers such as the superlattice periods, the interfacial roughness, and interplane distance were obtained. It was found that for our NixFe100-x/Mo system, the Mo layer has bcc structure with [110] preferential orientation, while the preferential orientation of the NixFe100-x layer changes from a fee structure with [111] preferential orientation to a bcc structure with [110] preferential orientation with decreasing values of x. An intermixing layer located in the interlayer region between the NixFe100-x and Mo layers exists in the multilayers, and its thickness is almost invariant with respect to an increase of Mo layer thickness and/or a decrease of x in the region of x greater than or equal to 39. The thickness of the intermixing layer falls to zero when x less than or equal to 23.

Aluminum induced crystallization of strongly (111) oriented polycrystalline silicon thin film and nucleation analysis

A polycrystalline silicon thin film was fabricated on glass substrate by means of aluminum induced crystallization (AIC). Al and alpha-Si layers were deposited by magnetron sputtering respectively and annealed at 480A degrees C for 1 h to realize layer exchange. The polycrystalline silicon thin film was continuous and strongly (111) oriented. By analyzing the structure variation of the oxidation membrane and lattice mismatch between gamma-Al2O3 and Si, it was concluded that aluminum promoted the formation of (111) oriented silicon nucleus by controlling the orientation of gamma-Al2O3, which was formed at the early stage of annealing.

磁控溅射阴极靶磁场分布的定量评价

针对磁控溅射阴极靶磁场分布难以进行定量评价的问题,提出以磁场水平分量Bx的平行率Rk为量化指标,对磁场分布状态进行评价的新方法;采用有限元方法,模拟分析了磁控溅射阴极靶结构参数对磁场分布的影响规律,并利用Rk对结构参数的合理性进行了验证.结果表明,量化指标Rk可以有效地评价磁场分布的优劣,能够为磁场模拟及分析提供基础的科学判据

Modification of ZnO films under high energy Xe-ion irradiations

ZnO films were deposited on (100) Si substrate by radio frequency magnetron sputtering. These films were irradiated at room temperature with 308 MeV Xe-ions to a fluence of 1.0 x 10(12), 1.0 x 10(13) or 1.0 x 10(14) Xe/cm(2). Then the samples were investigated using RBS, XRD, FESEM and PL analyses. The obtained experimental results showed that the deposited ZnO films were highly c-axis orientated and of high purity, 308 MeV Xe-ion irradiations could not change the c-axis oriented. The topography and PL properties of the ZnO films varied with increasing the Xe-ion irradiation fluence. For 1.0 x 10(13) or 1.0 x 10(14) Xe/cm(2) irradiated samples, surface cracks were observed. Furthermore, it was found that the 1.0 x 10(14) Xe/cm(2) irradiated sample exhibiting the strongest PL ability. The modification of structure and PL properties induced by 308 MeV Xe-ion irradiations were briefly discussed. (C) 2008 Elsevier B.V. All rights reserved.

The effects of shell characteristics on the current-voltage behaviors of dye-sensitized solar cells based on ZnO/TiO2 core/shell arrays

The ZnO/TiO2 core/shell structure was formed through deposition of a TiO2 coating layer on the hydrothermally fabricated ZnO nanorod arrays through radio frequency magnetron sputtering. The effects of the TiO2 shell's characteristics on the current-voltage behaviors of the core/shell-based dye-sensitized solar cells (CS-DSSC) were investigated. As the rates of injection, transfer, and recombination of electrons of such CS-DSSC were affected significantly by the crystallization, morphology, and continuity of the TiO2 shells, the photovoltaic efficiency was accordingly varied remarkably. In addition, the efficiency was further improved by enhancing the surface area in the core/shell electrode.

Studies on microstructure bilayer film of ultrasonic dipped cadmium sulfide and d.c. sputtered indium tin oxide

A bilayer CdS/ITO film was obtained. The dipped CdS was grown by an ultrasonic colloid deposition (USCD) method. Microstructure of the CdS film made by USCD has a wider transmission range and a higher transmittance. Amorphous indium-tin-oxide (ITO) thin film was deposited using d.c. magnetron-sputtering at room temperature. The ITO films exhibited good conductivity and maximum transmittance of 94%. The CdS/ITO bilayer was investigated by means of GIXD (grazing incidence X-ray diffraction) at different incidence angles (alpha = 0.20-5.00degrees) and XRD. We discuss a model for the thin bilayer film. SEM and AFM show that homogeneous CdS films with a bar-shaped ultrafine particles and ITO film with nanometer structure. The mechanism of the bilayer CdS/ITO film is discussed.

卷绕式海绵材料真空磁控溅射镀膜设备的研制

本文介绍了海绵卷绕真空磁控溅射镀膜设备的结构及其特点,采用独特的传动机构,靶极结构及控制方式实现了海绵连续卷绕真空磁控溅射镀膜。

海绵卷绕真空磁控溅射镀膜过程中的传动控制

根据磁控溅射中海绵的传动特性,建立了传动控制的数学模型,采用带有矢量的变频调速器实现了海绵卷绕真空镀膜过程中的张力控制,满足了磁控溅射中海绵卷绕的传动要求。

海绵卷绕真空磁控溅射镀膜设备的研制

本文介绍了海绵卷绕真空磁控溅射镀膜设备的结构及其特点,采用独特的传动机构,靶极结构及控制方式实现了海绵卷绕真空磁控溅射镀膜。

Structural modification of TiO2 nanorod films with an influence on the photovoltaic efficiency of a dye-sensitized solar cell (DSSC).

TiO2 nanorod films have been deposited on ITO substrates by dc reactive magnetron sputtering technique. The structures of these nanorod films were modified by the variation of the oxygen pressure during the sputtering process. Although all these TiO2 nanorod films deposited at different oxygen pressures show an anatase structure, the orientation of the nanorod films varies with the oxygen pressure. Only a very weak (101) diffraction peak can be observed for the TiO2 nanorod film prepared at low oxygen pressure. However, as the oxygen pressure is increased, the (220) diffraction peak appears and the intensity of this diffraction peak is increased with the oxygen pressure. The results of the SEM show that these TiO2 nanorods are perpendicular to the ITO substrate. At low oxygen pressure, these sputtered TiO2 nanorods stick together and have a dense structure. As the oxygen pressure is increased, these sputtered TiO2 nanorods get separated gradually and have a porous structure. The optical transmittance of these TiO2 nanorod films has been measured and then fitted by OJL model. The porosities of the TiO2 nanorod films have been calculated. The TiO2 nanorod film prepared at high oxygen pressure shows a high porosity. The dye-sensitized solar cells (DSSCs) have been assembled using these TiO2 nanorod films prepared at different oxygen pressures as photoelectrode. The optimum performance was achieved for the DSSC using the TiO2 nanorod film with the highest (220) diffraction peak and the highest porosity.

Increasing the wear resistance of molds for injection of glass fiber reinforced plastics

Abrasion by glass fibers during injection molding of fiber reinforced plastics raises new challenges to the wear performance of the molds. In the last few decades, a large number of PVD and CVD coatings have been developed with the aim of minimizing abrasion problems. In this work, two different coatings were tested in order to increase the wear resistance of the surface of a mold used for glass fiber reinforced plastics: TiAlSiN and CrN/CrCN/DLC. TiAlSiN was deposited as a graded monolayer coating while CrN/CrCN/DLC was a nanostructured coating consisting of three distinct layers. Both coatings were produced by PVD unbalanced magnetron sputtering and were characterized using scanning electron microscopy (SEM) provided with energy dispersive spectroscopy (EDS), atomic force microscopy (AFM), micro hardness (MH) and scratch test analysis. Coating morphology, thickness, roughness, chemical composition and structure, hardness and adhesion to the substrate were investigated. Wear resistance was characterized through industrial tests with coated samples and an uncoated reference sample inserted in a feed channel of a plastic injection mold working with 30 wt.% glass fiber reinforced polypropylene. Results after 45,000 injection cycles indicate that the wear resistance of the mold was increased by a factor of 25 and 58, by the TiAlSiN and CrN/CrCN/DLC coatings, respectively, over the uncoated mold steel.

Fully transparent ZnO thin-film transistor produced at room temperature

Advanced Materials, Vol. 17, nº 5

Étude de la cinétique et des dommages de gravure par plasma de couches minces de nitrure d’aluminium

Une étape cruciale dans la fabrication des MEMS de haute fréquence est la gravure par plasma de la couche mince d’AlN de structure colonnaire agissant comme matériau piézoélectrique. Réalisé en collaboration étroite avec les chercheurs de Teledyne Dalsa, ce mémoire de maîtrise vise à mieux comprendre les mécanismes physico-chimiques gouvernant la cinétique ainsi que la formation de dommages lors de la gravure de l’AlN dans des plasmas Ar/Cl2/BCl3. Dans un premier temps, nous avons effectué une étude de l’influence des conditions opératoires d’un plasma à couplage inductif sur la densité des principales espèces actives de la gravure, à savoir, les ions positifs et les atomes de Cl. Ces mesures ont ensuite été corrélées aux caractéristiques de gravure, en particulier la vitesse de gravure, la rugosité de surface et les propriétés chimiques de la couche mince. Dans les plasmas Ar/Cl2, nos travaux ont notamment mis en évidence l’effet inhibiteur de l’AlO, un composé formé au cours de la croissance de l’AlN par pulvérisation magnétron réactive et non issu des interactions plasmas-parois ou encore de l’incorporation d’humidité dans la structure colonnaire de l’AlN. En présence de faibles traces de BCl3 dans le plasma Ar/Cl2, nous avons observé une amélioration significative du rendement de gravure de l’AlN dû à la formation de composés volatils BOCl. Par ailleurs, selon nos travaux, il y aurait deux niveaux de rugosité post-gravure : une plus faible rugosité produite par la présence d’AlO dans les plasmas Ar/Cl2 et indépendante de la vitesse de gravure ainsi qu’une plus importante rugosité due à la désorption préférentielle de l’Al dans les plasmas Ar/Cl2/BCl3 et augmentant linéairement avec la vitesse de gravure.