Modification of ZnO films under high energy Xe-ion irradiations
| Data(s) |
2008
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| Resumo |
ZnO films were deposited on (100) Si substrate by radio frequency magnetron sputtering. These films were irradiated at room temperature with 308 MeV Xe-ions to a fluence of 1.0 x 10(12), 1.0 x 10(13) or 1.0 x 10(14) Xe/cm(2). Then the samples were investigated using RBS, XRD, FESEM and PL analyses. The obtained experimental results showed that the deposited ZnO films were highly c-axis orientated and of high purity, 308 MeV Xe-ion irradiations could not change the c-axis oriented. The topography and PL properties of the ZnO films varied with increasing the Xe-ion irradiation fluence. For 1.0 x 10(13) or 1.0 x 10(14) Xe/cm(2) irradiated samples, surface cracks were observed. Furthermore, it was found that the 1.0 x 10(14) Xe/cm(2) irradiated sample exhibiting the strongest PL ability. The modification of structure and PL properties induced by 308 MeV Xe-ion irradiations were briefly discussed. (C) 2008 Elsevier B.V. All rights reserved. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Zang, H (Zang, H.); Wang, ZG (Wang, Z. G.); Peng, XP (Peng, X. P.); Song, Y (Song, Y.); Liu, CB (Liu, C. B.); Wei, KF (Wei, K. F.); Zhang, CH (Zhang, C. H.); Yao, CF (Yao, C. F.); Ma, YZ (Ma, Y. Z.); Zhou, LH (Zhou, L. H.); Sheng, YB (Sheng, Y. B.); Gou, J (Gou, J.) .Modification of ZnO films under high energy Xe-ion irradiations ,NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2008,266(12-13 ):2863-2867 |
| Palavras-Chave | #ZnO films #Xe-ion irradiation #RBS #XRD #FESEM #photoluminescence |
| Tipo |
期刊论文 |
