Quantum coherent networks: A theoretical study

Electron transport in quantum coherent networks (interacting quantum waveguide arrays) is investigated theoretically with use of the scattering-matrix method. The scattering matrix for the basic unit of networks, the cross junction with Square or rounded corners, is derived using the mode-matching technique, The overall scattering matrix for the network is obtained by the composition of the scattering matrices associated with each unit of the network, For a uniform network, the transmission spectra are calculated in the single-mode regime and an found notably dependent on the junction geometry. Small reflection for the input terminal and uniform output for some output ports are obtained, which means that the quantum coherent network can be used as a distributing net for the electron waves. Cross junctions with rounded corners of large radii are found to play a negative role in the device application of quantum coherent networks. (C) 1997 American Institute of Physics.

重掺B对应变SiGe材料能带结构的影响

硅锗异质结双极晶体管(SiGe HBT)一般以重掺硼(B)的应变SiGe层作为基区.精确表征SiGe材料能带结构对SiGe HBT的设计具有重要的意义.在应变SiGe材料中,B的重掺杂一方面会因为重掺杂效应使带隙收缩,另一方面,B的引入还会部分补偿Ge引起的应变,从而改变应变引起的带隙变化.在重掺B的应变SiGe能带结构研究中,采用半经验方法,考虑了B的应变补偿作用对能带的影响,对Jain-Roulston模型进行修正,并分析了重掺杂引起的带隙收缩在导带和价带的分布.

Zn-doped InGaAs Base Heterojunction Bipolar Transistors Grown by Low Pressure Metal Organic Chemical Vapor Deposition

High performance InP/InGaAs heterojunction bipolar transistors(HBTs) have been widely used in high-speed electronic devices and optoelectronic integrated circuits. InP-based HBTs were fabricated by low pressure metal organic chemical vapor deposition(MOCVD) and wet chemical etching. The sub-collector and collector were grown at 655 ℃ and other layers at 550 ℃. To suppress the Zn out-diffusion in HBT, base layer was grown with a 16-minute growth interruption. Fabricated HBTs with emitter size of 2.5×20 μm~2 showed current gain of 70~90, breakdown voltage(BV_(CE0))>2 V, cut-off frequency(f_T) of 60 GHz and the maximum relaxation frequency(f_(MAX)) of 70 GHz.

A Multi-Finger Si_(1-x)Ge_x/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications

A large area multi-finger configuration power SiGe HBT device(with an emitter area of about 880μm~2)was fabricated with 2μm double-mesa technology.The maximum DC current gain β is 214.The BV_(CEO) is up to 10V,and the BV_(CBO) is up to 16V with a collector doping concentration of 1×10~(17)cm~(-3) and collector thickness of 400nm.The device exhibits a maximum oscillation frequency f_(max) of 19.3GHz and a cut-off frequency f_T of 18.0GHz at a DC bias point of I_C=30mA and V_(CE)=3V.MSG(maximum stable gain)is 24.5dB,and U(Mason unilateral gain)is 26.6dB at 1GHz.Due to the novel distribution layout,no notable current gain fall-off or thermal effects are observed in the I-V characteristics at high collector current.

高频大功率SiGe／SiHBT的设计

详细地阐述了高频大功率SiGe／Si异质结双极晶体管（HBT）设计中的一些主要问题，主要包括器件的纵向设计中发射区、基区以及收集区中掺杂浓度、形貌分布、层厚的选择以及横向布局设计中的条宽、间隔的选择等。并对这些主要参数的选择给出了一些实用的建议。

基于共振隧穿二极管的集成电路研究

RTD基集成电路所具有的超高速、低功耗和自锁存的特性，使其在数字电路、混合信号电路以及光电子系统中有着重要的应用。首先对RTD与化合物半导体HEMT，HBT以及硅CMOS器件的集成工艺进行了介绍。在MOBILE电路及其进和延伸的基础上，对高速ADC/DAC电路和低功耗的存储器电路进行了具体的分析。最后对RTD基电路面临的主要问题和挑战进行了讨论，提出基于硅基RTD与线性阈值门(LTG)逻辑相结合是未来纳米级超大规模集成电路的最佳发展方向.

Design and Fabrication of Power Si1-xGex/Si Heterojunction Bipolar Transistor for Wireless Power Amplifier Applications

A multi-finger structure power SiGe HBT device （with an emitter area of about 166μm^2） is fabricated with very simple 2μm double-mesa technology. The DC current gain β is 144.25. The B-C junction breakdown voltage reaches 9V with a collector doping concentration of 1 × 10^17cm^-3 and a collector thickness of 400nm. Though our data are influenced by large additional RF probe pads, the device exhibits a maximum oscillation frequency fmax of 10.1GHz and a cut-off frequency fτ of 1.8GHz at a DC bias point of IC=10mA and VCE = 2.5V.

InP基长波长光发射OEIC材料的MOCVD生长

为了生长制作器件所需的外延片,采用低压金属有机物化学气相沉积方法在半绝缘InP衬底上生长了InP/InGaAs异质结双极晶体管(HBT)结构、1.55μm多量子阱激光二极管以及两者集成的光发射光电集成电路材料结构.激光器结构的生长温度为655℃,有源区为5个周期的InGaAsP/ InGaAsP多量子阱(阱区λ＝1.6μm,垒区λ＝1.28μm);HBT结构则采用550℃低温生长,其中基区采用Zn掺杂,掺杂浓度约为2×1019cm-3.对生长的各种结构分别进行了X射线双晶衍射,光致发光谱和二次离子质谱仪的测试,结果表明所生长的材料结构已满足制作器件的要求.

GSMBE生长SiGe/Si材料的原位掺杂控制技术

在特定温控下对掺杂气体分子的状态和活性进行控制，建立了一套具有自主知识产权的气源分子束外延工艺生长SiGe/Si材料的原位掺杂控制技术。采用该技术生长的SiGe/Si HBT外延材料，可将硼杂质较好地限制在SiGe合金基区内，并能有效地提高磷烷对N型掺杂的浓度和外延硅层的生长速率，获得了理想N,P型杂质分布的SiGe/Si HBT外延材料。

Heteroepitaxial Growth and Heterojunction Characteristics of Voids-Free n-3C-SiC on p-Si(100)

Highly oriented voids-free 3C-SiC heteroepitaxial layers are grown on φ50mm Si (100) substrates by low pressure chemical vapor deposition (LPCVD). The initial stage of carbonization and the surface morphology of carbonization layers of Si(100) are studied using reflection high energy electron diffraction (RHEED) and scanning electron microscopy (SEM). It is shown that the optimized carbonization temperature for the growth of voids-free 3S-SiC on Si (100) substrates is 1100 ℃. The electrical properties of SiC layers are characterized using Van der Pauw method. The I-V, C-V, and the temperature dependence of I-V characteristics in n-3C-SiC-p-Si heterojunctions with AuGeNi and Al electrical pads are investigated. It is shown that the maximum reverse breakdown voltage of the n-3C-SiC-p-Si heterojunction diodes reaches to 220V at room temperature. These results indicate that the SiC/Si heterojunction diode can be used to fabricate the wide bandgap emitter SiC/Si heterojunction bipolar transistors (HBT's).

低温Si-GSMBE中Si_2H_6的热裂解及对Si生长的影响

为提高外延SiGe/Si HBT材料中Si发射极的生长速率，研究了Si_2H_6预热温度对Si生长速率的影响，结果表明在一很窄的温区内，Si的生长速率提高了一倍，进一步升温Si的生长速率迅速下降。用四极质谱仪对低温Si-GSMBE中Si_2H_6的热裂解过程进行了研究，对该现象做了解释。

SiGe/Si异质结构的x射线双晶衍射

通过X射线双晶衍射图形讨论了SiGe/Si HBT的电学特性与晶格结构的关系。

Fracture of colloidal single-crystal films fabricated by controlled vertical drying deposition

Controlled vertical drying deposition method was used to make high-quality single crystal close-packed colloidal films formed of different radii polystyrene latex spheres on glass substrates coming from a low concentration water suspension (0.1% volume fraction). Regardless of the spheres radii the film thickness was about 6.3 microns. However, cracks destroyed the crystalline film structure during the colloidal film growth. The effect of particle radius (85-215 nm range) on film cracking was systematically studied using in situ optical fracture monitoring. Primary parallel cracks run along the vertical growth direction, later followed by secondary branched cracks in-between the primary cracks due to residual water evaporation. Quantitative theoretical relationship between the cracks spacing and particles radius was derived and shows good agreement with experimental observations. Normalized cracks spacing is related to a reciprocal ratio of the dimensionless particle radius.

流体力学半径对估算胶体微球聚集速率常数的影响

胶体粒子聚集速率常数实验值远低于理论值一直是被普遍关注的问题.聚集速率常数的理论推导是基于粒子的几何半径来考虑的,但决定粒子扩散速率及聚集速率的应该是粒子的流体力学半径(大于几何半径),因而它是使聚集速率常数实验值低于理论值的因素之一.影响流体力学半径的因素很多,其中,带电粒子在溶液中因表面存在双电层,会明显增大流体力学半径,造成聚集速率减慢.而双电层的厚度又随溶液中离子强度的不同而改变.本工作在聚集速率的公式中引入了修正因子,即几何半径与其流体力学半径之比,以修正由于用几何半径代替流体力学半径带来的误差.其中几何半径和流体力学半径可以分别用扫描电镜(SEM)和动态光散射(DLS)来测定.以两种粒径的聚苯乙烯带电微球为例,考察了在不同离子强度下,该误差的大小.结果发现,对于半径为30 nm的微球,用流体力学半径计算的慢聚集速率常数比理论值偏低约8%.该误差随离子强度增加而减少.对于快聚集情况,流体力学半径对聚集速率基本没有影响.

若尔盖湿地公路对两栖类的生态影响

本文考察了若尔盖高寒泥炭湿地公路对高原林蛙（Rana kukunoris）、倭蛙（Narorana pleskei）和岷山蟾蜍（Bufo minshanicus）的生态影响。分析了公路对两栖动物空间分布和栖息地利用的影响，并用IBM模型探讨其可能作用机制，考察了两栖动物公路死亡的季节差异及影响公路死亡空间分布的景观因素。最后通过对若尔盖高寒湿地两栖动物陆地核心栖息地的分析，为若尔盖路域栖息地的管理提供依据。 1. 对公路周边6个沼泽水凼群进行了调查，每个样地设置5条样线（距离公路10m、20m、50m、100m和150m）。调查表明，在繁殖季节(5月)，距离公路距离对高原林蛙和倭蛙的相对数量都有显著作用，其效应明显大于其他各项栖息地环境参数。公路导致高原林蛙和倭蛙在公路周边种群密度降低，其相对数量从距离公路100m处到公路边缘一直呈现逐渐降低的趋势。在繁殖季节，若尔盖高寒湿地的公路生态影响域大约在100-150m之间，这一距离远远大于森林栖息地中公路对两栖类的生态影响域（35-40 m）。 在繁殖后期（9月），对公路周边16个草地样点的样线调查表明，公路对周边高原林蛙和倭蛙密度分布并未造成显著影响。 2. 二次模型的拟合表明繁殖季节高原林蛙和倭蛙在公路周边的密度分布符合钟型曲线。前人对森林公路两侧两栖类分布的研究也显示了类似的规律。我们通过基于个体的模型，模拟在了公路边缘100单位距离内的栖息地空间，栖息地环境质量呈梯度变化，动物个体在其中通过随机运动寻找适宜的栖息地。拟合结果表明，动物个体仅仅依照简单的运动规则寻找适宜栖息地，这种活动就可以导致公路周边栖息地中的动物分布曲线出现3个局部峰。公路周边两栖动物的钟型分布曲线可能仅仅是个体寻找适宜栖息地过程中出现的临时性群体分布模式。 3. 在若尔盖高寒湿地，公路交通造成了大量两栖类死亡。但是公路两栖类动物死亡的季节分布很不均匀：5月、8月和9月死亡数量很高，而7月和10月死亡数量却很低。这种季节性差异和两栖类各个生活史阶段的迁移运动有密切的关系。利用景观参数的逻辑斯蒂回归模型显示，距离公路1000-2000m范围内的湿草地比例对三种两栖类公路死亡概率均有很强的贡献。湿草地这一栖息地类型分类中有大量的沼泽水体，是两栖类重要的繁殖点和取食点。两栖类公路死亡概率湿草地的关系从一个侧面表明，要维持一个区域较高的两栖类种群数量，需要1000-2000m半径范围内存在大面积的湿草地。 4. 高原林蛙和岷山蟾蜍不同性别和年龄个体分布点的水体距离存在显著差异。不同种类、年龄的两栖类分布点距离水体距离的差异可能是由于对水体的依赖性造成的。而相同种类、年龄段的个体中，高原林蛙雌性、岷山蟾蜍亚成体和雌性的体重与分布点距水体距离有显著负相关，这可能是因为体重更大的个体对水体的依赖性更弱。考虑到过大的陆地核心栖息地面积在实际保护工作中存在操作上的困难，因此我们认为可以以水体周边90%个体的分布区为低限确定3种两栖类的最小陆地核心栖息地。但是，在同样的水体距离-两栖类密度分布格局下，水体的面积和分形参数对最小陆地核心栖息地半径的确定有一定影响。 Ecological effects of alpine wetland road on Rana kukunoris, Narorana pleskei, Bufo minshanicus was studied in Zoige wetland. The effects of road on distribution of amphibians and its possible underline mechanism was discussed based on empirical data and computer simulation. Road killed amphibians was surveyed in different season and those landscape factor which could have impact on road killing distribution was analyses. Core terrestrial habitat of amphibians in Zoige wetland was discussed in the consideration of conservation management. 1. Six pool groups was investigated in breeding season (May) of R. kukunoris, N. pleskei. Five transects at distance of 10m, 20m, 50m, 100m and 150m from road edge was surveyed in each pool groups. There was a significant effects of distance from road edge on relative counts of R. kukunoris, N. pleskei, which is much important than effects of other environmental factors. Road caused the density of R. kukunoris, N. pleskei decreased from distance of 100m from road to 10m from road. Road ecological effect zone of alpine wetland for amphibians is about 100-150m. It is much wider than those of forest roads, which is about 35-40m. However, studies on 16 grassland near road showed no significant effect of road on amphibians after breeding season (Sep.). 2. Quadratic model fit indicated that the distribution of R. kukunoris and N. Pleskei followed a hump like curve. Previous studies on forest road showed similar results. A 100×100 habitat with gradual environment besides road was simulated with a individual-based model, and animal seek for suitable habitat with stochastic locomotion in it. Simulation results indicated that 3 density peak of animal distribution can emergent followed a simply rules. The hump like density cure could be a temporal swarm pattern during the process of individual seeking for habitat. 3. Road traffic caused mass death of amphibians in Zoige wetland. There was much road killed amphibians in May, Aug and Sep than those in July and Oct. The fluctuation of road kill could be related with migration of amphibians between seasons. Logistic regression of landscape variables indicated that wet grassland in 1000-2000m is essential to predict the probability of road kill. Wet grassland is an important breeding and forage habitat for amphibians. It also indicated that mass wet grassland in 1000-2000m is essential for maintain a big amphibian population. 4. There was significant differences among distance from aquatic site of subadults, female and males of R. kukunoris and B. Minshanicus. Possibly, it was because of their dependence on water. There was a significant negative relationship between distance from aquatic site and individuals body mass. Estimates of core habitat that are too large may make it difficult to establish protective regulations. The smallest suitable terrestrial core habitats were defined as the terrestrial habitats used during migration to and from the wetlands, and for foraging by 90% of any life stage (adults, and subadults) in a season. However, even with the same amphibian distribution pattern along the distance from aquatic sites, the radii of smallest suitable terrestrial core habitats will be varied with the fractal parameters of aquatic site.