SiGe HBTs on Bonded SOI Incorporating Buried Silicide Layers

The performance of silicon bipolar transistors has been significantly improved by the use of ultra narrow base layers of SiGe. To further improve device performance by minimising parasitic resistance and capacitance the authors produced an unique silicon-on-insulator (SOI) substrate incorporating a buried tungsten disilicide layer. This structure forms the basis of a recent submission by Zarlink Semiconductors ( Silvaco, DeMontfort & Queen�s) to DTI for high voltage devices for automotive applications. The Queen�s part of the original EPSRC project was rated as tending to outstanding.

Application of Geophysical Techniques in Identifying Illegally Buried Toxic Waste

Ground-penetrating radar (GPR) is a rapid geophysical technique that we have used to assess four illegally buried waste locations in Northern Ireland. GPR allowed informed positioning of the less-rapid, if more accurate use of electrical resistivity imaging (ERI). In conductive waste, GPR signal loss can be used to map the areal extent of waste, allowing ERI survey lines to be positioned. In less conductive waste the geometry of the burial can be ascertained from GPR alone, allowing rapid assessment. In both circumstances, the conjunctive use of GPR and ERI is considered best practice for cross-validation of results and enhancing data interpretation.