Silicon-on-insulator substrates with buried tungsten silicide layer


Autoria(s): Gamble, Harold; Armstrong, Mervyn; Baine, Paul; Bain, Michael; McNeill, David
Data(s)

01/04/2001

Identificador

http://pure.qub.ac.uk/portal/en/publications/silicononinsulator-substrates-with-buried-tungsten-silicide-layer(64923c54-23a5-413b-ab28-20b1b7914707).html

http://dx.doi.org/10.1016/S0038-1101(01)00075-2

http://www.scopus.com/inward/record.url?scp=0035335811&partnerID=8YFLogxK

Idioma(s)

eng

Direitos

info:eu-repo/semantics/restrictedAccess

Fonte

Gamble , H , Armstrong , M , Baine , P , Bain , M & McNeill , D 2001 , ' Silicon-on-insulator substrates with buried tungsten silicide layer ' Solid State Electronics , vol 45(4) , no. 4 , pp. 551-557 . DOI: 10.1016/S0038-1101(01)00075-2

Palavras-Chave #/dk/atira/pure/subjectarea/asjc/2200/2208 #Electrical and Electronic Engineering #/dk/atira/pure/subjectarea/asjc/2500/2504 #Electronic, Optical and Magnetic Materials #/dk/atira/pure/subjectarea/asjc/3100/3104 #Condensed Matter Physics
Tipo

article