Dopant Transport in Tungsten Silicide Buried Layers for Application in SSOI

Autoria(s): Armstrong, Mervyn; Baine, Paul; Montgomery, John; McNeill, David; Gamble, Harold; Bain, Michael
Data(s)

01/04/2010
Identificador

http://pure.qub.ac.uk/portal/en/publications/dopant-transport-in-tungsten-silicide-buried-layers-for-application-in-ssoi(b3fd0469-57b7-4f7f-9a77-b5fc4f180c11).html
Idioma(s)

eng
Direitos

info:eu-repo/semantics/restrictedAccess
Fonte

Armstrong , M , Baine , P , Montgomery , J , McNeill , D , Gamble , H & Bain , M 2010 , ' Dopant Transport in Tungsten Silicide Buried Layers for Application in SSOI ' ECS Transactions , vol 28(1) , pp. 331-341 .
Tipo

article
Acesso ao item digital