Fabrication of SOI substrates with buried tungsten silicide layer by smart-cut technique

Autoria(s): Suder, Suli; Hurley, Richard; Bain, Michael; Baine, Paul; McNeill, David; Armstrong, Mervyn; Gamble, Harold
Data(s)

01/09/2001
Identificador

http://pure.qub.ac.uk/portal/en/publications/fabrication-of-soi-substrates-with-buried-tungsten-silicide-layer-by-smartcut-technique(8bd6dcaa-e6e2-421b-a20a-24621e4b1b59).html

http://www.scopus.com/inward/record.url?scp=1842791413&partnerID=8YFLogxK
Idioma(s)

eng
Direitos

info:eu-repo/semantics/restrictedAccess
Fonte

Suder , S , Hurley , R , Bain , M , Baine , P , McNeill , D , Armstrong , M & Gamble , H 2001 , ' Fabrication of SOI substrates with buried tungsten silicide layer by smart-cut technique ' Paper presented at Proceedings of 9th International Symposium on Integrated Circuits, Devices & Systems, ISIC-2001 , Singapore , Singapore , 01/09/2001 - 01/09/2001 , pp. 279-282 .
Tipo

conferenceObject
Acesso ao item digital