SiGe Heterojunction Bipolar Transistors on Bonded SOI Incorporating Buried Silicide Layers

Autoria(s): Armstrong, Mervyn; Bain, Michael; Gamble, Harold
Data(s)

01/03/2005
Identificador

http://pure.qub.ac.uk/portal/en/publications/sige-heterojunction-bipolar-transistors-on-bonded-soi-incorporating-buried-silicide-layers(e19f4ec5-41a2-4799-a2db-63e12af9082a).html
Idioma(s)

eng
Direitos

info:eu-repo/semantics/restrictedAccess
Fonte

Armstrong , M , Bain , M & Gamble , H 2005 , ' SiGe Heterojunction Bipolar Transistors on Bonded SOI Incorporating Buried Silicide Layers ' IEEE Transactions on Energy Conversion , vol 52(3) , pp. 317-324 .
Tipo

article
Acesso ao item digital