Impact of buried oxide thickness and ground plane resistivity on substrate cross-talk in Ground Plane Silicon-on-Insulator (GPSOI) cross-talk suppression technology

Autoria(s): Armstrong, Mervyn; Bain, Michael; Baine, Paul; Gamble, Harold
Data(s)

01/10/2004
Identificador

http://pure.qub.ac.uk/portal/en/publications/impact-of-buried-oxide-thickness-and-ground-plane-resistivity-on-substrate-crosstalk-in-ground-plane-silicononinsulator-gpsoi-crosstalk-suppression-technology(ece1e7b4-d52d-4e93-9f31-e9c0b641be7d).html

http://www.scopus.com/inward/record.url?scp=16244406803&partnerID=8YFLogxK
Idioma(s)

eng
Direitos

info:eu-repo/semantics/restrictedAccess
Fonte

Armstrong , M , Bain , M , Baine , P & Gamble , H 2004 , ' Impact of buried oxide thickness and ground plane resistivity on substrate cross-talk in Ground Plane Silicon-on-Insulator (GPSOI) cross-talk suppression technology ' Paper presented at Proceedings - IEEE Intl SOI Conf, Proceedings, p 84-85 , Charleston , United States , 01/10/2004 - 01/10/2004 , pp. 84-85 .
Tipo

conferenceObject
Acesso ao item digital