Optimisation of trench isolated bipolar transistors on SOI substrates by 3D electro-thermal simulations

This paper provides a comprehensive analysis of thermal resistance of trench isolated bipolar transistors on SOI substrates based on 3D electro-thermal simulations calibrated to experimental data. The impact of emitter length, width, spacing and number of emitter fingers on thermal resistance is analysed in detail. The results are used to design and optimise transistors with minimum thermal resistance and minimum transistor area. (c) 2007 Elsevier Ltd. All rights reserved.

Kinetic analysis of the cleavage of human protease-activated receptor-1/2/3 and 4 using quenched-fluorescent peptide substrates

Protease-activated receptors [PARs] are a family of G-protein-coupled seven-transmembrane domain receptors that are activated by proteolytic cleavage of their amino-terminal exodomain. To characterize the cleavage rate of human PAR-1 / 2 / 3 and 4 by trypsin and thrombin, four synthetic quenched-fluorescent peptide substrates have been synthesized. Each substrate consisted of a ten-residue peptide spanning the receptor activation cleavage site and using progress-curve kinetics, k(cat)/K-m values were determined.

Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substrates

Hafnium oxide films have been deposited at 250 °C on silicon and germanium substrates by atomic layer deposition (ALD), using tetrakis-ethylmethylamino hafnium (TEMAH) and water vapour as precursors in a modified Oxford Instruments PECVD system. Self-limiting monolayer growth has been verified, characterised by a growth rate of 0.082 nm/ cycle. Layer uniformity is approximately within ±1% of the mean value. MOS capacitors have been fabricated by evaporating aluminium electrodes. CV analysis has been used to determine the bulk and interface properties of the HfO 2, and their dependence on pre-clean schedule, deposition conditions and post-deposition annealing. The dielectric constant of the HfO 2 is typically 18. On silicon, best results are obtained when the HfO 2 is deposited on a chemically oxidised hydrophilic surface. On germanium, best results are obtained when the substrate is nitrided before HfO 2 deposition, using an in-situ nitrogen plasma treatment. © Springer Science+Business Media, LLC 2007.

Fabrication of Sub-micron Active Layer SSOI Substrates using Ion Splitting and Wafer Bonding Technologies

This paper reports the fabrication of SSOI (Silicon on Silicide On Insulator) substrates with active silicon regions only 0.5mum thick, incorporating LPCVD low resistivity tungsten silicide (WSix) as the buried layer. The substrates were produced using ion splitting and two stages of wafer bonding. Scanning acoustic microscope imaging confirmed that the bond interfaces are essentially void-free. These SSOI wafers are designed to be employed as substrates for mm-wave reflect-array diodes, and the required selective etch technology is described together with details of a suitable device.

Stereochemical and mechanistic aspects of dioxygenase-catalysed benzylic hydroxylation of indene and chromane substrates

Toluene dioxygenase (TDO)-catalysed benzylic hydroxylation of indene substrates (8, 16 and 17), using whole cell cultures of Pseudomonas putida UV4, was found to yield inden-1-ol (14 and 22) and indan-1-one bioproducts (15 and 23). The formation of these bioproducts is consistent with the involvement of carbon-centred radical intermediates. TDO-catalysed oxidation of indenes 8 and 16 also gave cis-diols 13 and 18 respectively. TDO and naphthalene dioxygenase (NDO), used as both whole-cell preparations and as purified enzymes, were found to catalyse the benzylic hydroxylation of chromane 30, deuteriated (+/-)-chromane 30(D) and enantiomers (4S)-30(D) and (4R)-30(D) to yield (4R)- and (4S)-chroman-4-ols 31/31(D) respectively. The mechanism of benzylic hydroxylation of chromane 30/30(D) involves the stereoselective abstraction of a pro-R (with TDO) or a pro-S (with NDO) hydrogen atom at C-4 and a marked preference for retention of configuration.