Circular geometry MOS transistor analysis of SOI substrates for high energy physics particle detectors
| Data(s) |
01/03/2008
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| Identificador |
http://www.scopus.com/inward/record.url?scp=51349130233&partnerID=8YFLogxK |
| Idioma(s) |
eng |
| Direitos |
info:eu-repo/semantics/restrictedAccess |
| Fonte |
Armstrong , M , Gamble , H , Ruddell , F , Montgomery , J , Suder , S , Casse , G , Bowcock , T & Allport , P P 2008 , ' Circular geometry MOS transistor analysis of SOI substrates for high energy physics particle detectors ' Paper presented at Proc IEEE Conference on Microelectronic Test Structures , Edinburgh , United Kingdom , 01/03/2008 - 01/03/2008 , pp. 101-104 . |
| Tipo |
conferenceObject |
