Gate dielectrics on strained-Ge layers on Si(1-x)/Ge( x)/Si virtual substrates

Autoria(s): Armstrong, Mervyn; Gamble, Harold
Data(s)

01/11/2003
Identificador

http://pure.qub.ac.uk/portal/en/publications/gate-dielectrics-on-strainedge-layers-on-si1xge-xsi-virtual-substrates(b9bf4fe3-f6ae-4822-9bbf-44b9643969a9).html
Idioma(s)

eng
Direitos

info:eu-repo/semantics/restrictedAccess
Fonte

Armstrong , M & Gamble , H 2003 , ' Gate dielectrics on strained-Ge layers on Si(1-x)/Ge( x)/Si virtual substrates ' Paper presented at Extended Abstracts of Intl Workshop on Gate Insulator (IEEE Cat. No.03EX765), 2003, p 48-9 , Tokyo , Japan , 01/11/2003 - 01/11/2003 , pp. 48-49 .
Tipo

conferenceObject
Acesso ao item digital