Fabrication of Sub-micron Active Layer SSOI Substrates using Ion Splitting and Wafer Bonding Technologies
| Data(s) |
01/09/2003
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|---|---|
| Identificador |
http://www.scopus.com/inward/record.url?scp=3042826209&partnerID=8YFLogxK |
| Idioma(s) |
eng |
| Direitos |
info:eu-repo/semantics/restrictedAccess |
| Fonte |
Ruddell , F , Bain , M , Suder , S , Hurley , R , Armstrong , M , Fusco , V & Gamble , H 2003 , Fabrication of Sub-micron Active Layer SSOI Substrates using Ion Splitting and Wafer Bonding Technologies . in SEMICONDUCTOR WAFER BONDING VII: SCIENCE, TECHNOLOGY, AND APPLICATIONS, PROCEEDINGS . vol. 2003 , pp. 25-30 , Electrochemical Society Proc, v 19, Semiconductor Wafer Bonding VII: Science, Technology, & Applications , Paris , France , 1-1 September . |
| Tipo |
contributionToPeriodical |
| Resumo |
This paper reports the fabrication of SSOI (Silicon on Silicide On Insulator) substrates with active silicon regions only 0.5mum thick, incorporating LPCVD low resistivity tungsten silicide (WSix) as the buried layer. The substrates were produced using ion splitting and two stages of wafer bonding. Scanning acoustic microscope imaging confirmed that the bond interfaces are essentially void-free. These SSOI wafers are designed to be employed as substrates for mm-wave reflect-array diodes, and the required selective etch technology is described together with details of a suitable device. |
