稀土苯多酸络合物的合成及其性质的研究

苯多酸作为配体，因有多个可参与配位的羧基，因此，可以和稀土离子生成不同配比而结构特殊的化合物，同时这类化合物具有一系列有趣的性质。本论文选择1,2,4,5-苯四酸（H_4L），1,3,5-苯三酸（H_3L_I），1,2,4-苯三酸（H_3L_(II)）和1,2,3-苯三酸（H_3L_(III)）作为配体，合成了除P_m以外的十四个镧系元素和Y的络合物。对于稀土和均苯四酸的络合物，除得到了文献曾报导过的4:3组成外，还合成了一个新的系列，其组成为1:1的络合物：Ln·HL·nH_2O(Ln = La-Gd，Er，Y)和Ln·L·NH_4·nH_2O(Ln=Eu，Tb-Lu)。培养出了未见文献报导的稀土Er与均苯四酸络合物的单晶，晶体结构分析指出其组成为[ Er·L·3H_2O]·NH_4·4H_2O，中心离子和配体形成八配位络阴离子，呈畸变的四方反棱柱结构。对所合成的稀土苯多酸络合物（除稀土和1,2,3-苯三酸络合物外），进行了热分析研究，结果表明这类络合物具有很高的热稳定性，空气中，除Ce外，其分解温度均大于420 ℃。指出了络合物热分解机理，对于绝大部分稀土苯多酸络合物。分解分两步进行，第一步络合物脱水，第二步分解为氧化物。镧的苯多酸络合物其分解过程经碱式碳酸盐（LaO）_2 CO_3，最后分解为La_2O_3。络合物DTA分解峰温随稀土原子序有规律地变化，且不同的苯多酸系列络合物呈类似的变化规律，变价元素处于曲线峰谷的位置。测定Ln_4L_3·nH_2O系列络合物的脱水热及脱水和分解表观活化能。系统地研究了络合物在4000-100cm~(-1)范围内的FT-IR光谱，通过对羧基反对称和对称伸缩振动的分析，指出了络合物中羧基的可能配位形式。对组成为Ln·HL·nH_2O(Ln=La-Gd，Y)，Ln·L·NH_4·nH_2O (Ln=Tb-Lu)，LnL_I·nH_2O (Ln = La-Ho)和LnL_(II)·nH_2O (Ln=Pr-Tm)的络合物，指认了Ln-O链伸缩振动，其振动频率随稀土离子总角动量量子数呈类似“斜W”效应的变化。对于Ln_4L_3·nH_2O，LnL_I·nH_2O和LnL_(II)·nH_2O络合物，随着配体的不同，羧基反对称和对称伸缩振动频率差ΔV以ΔV_(1,3,5)BTA > ΔV_(PMA) > ΔV_(1,2,4)BTA的规律变化。研究了Eu和Tb苯多酸铬合物的萤光相对亮度及其萤光光谱，对Tb络合物，其萤光相对亮度随配体结构的变化有如下变化规律：PMA > 1,2,4 BTA≥1,2,3 BTA > 1,3,5 BTA。Tb的PMA络合物由于其发光强度较大，有可能在实际中得到应用。

阿片类药物成瘾者瞳孔光反射的检测和特征提取

建立了一种基于图像处理的快速瞳孔直径检测算法,运用此算法提取了反映阿片类药物成瘾人员与正常人对瞳孔光反射变化差异的3个特征值:绝对收缩幅度(absolute amplitude of contraction,AAC)、相对收缩幅度(relative amplitude of contraction,RAC)和收缩斜率(SCV,slope of contraction velocity);分别研究了成瘾、性别、近视、年龄、睡眠剥夺等因素对于这3个特征值的影响。不同性别、近视人员、睡眠剥夺人员与正常人之间的3个特征值均无显著差异,成瘾人员与之对比均显著减小。老年人相对于正常青年人,3个特征值都明显减小;与成瘾人员相比,仅在RAC值上有显著差异。结果表明,阿片类药物成瘾人员除了与正常人外,也与其他具有潜在影响瞳孔变化因素的非阿片成瘾人员在瞳孔对光反射的特征值上具有显著差异。该研究的实验数据为进一步建立基于检测瞳孔对光反射其直径发生变化的方法来快速、非接触地鉴别出阿片类药物成瘾人员提供了可靠的依据。

12路40Gb/s甚短距离并行光传输信号转换器研究

基于OIF-VSR5-01.0规范,分析了12路并行40Gb/s甚短距离(VSR)光传输转换器模块的实现原理.采用top-down分析方法,使用硬件描述语言verilog,在可编程逻辑器件上完成了时钟数据恢复、基于字节对齐方案的帧同步、信道去斜移、比特间差奇偶校验(BIP)等功能模块的程序设计,实现了SFI-5与OIF-VSR5-01.0电信号格式的相互转换,并在Altera的Stratix II GX 系列的高速现场可编程门阵列(FPGA)上对功能模块进行了功能验证和联合仿真.结果表明所设计的各个功能模块满足系统应用要求,为下一步将系统设计转换为专用集成电路(ASIC)奠定了基础.

生长温度对InAs／GaSb超晶格晶体结构和表面形貌的影响

采用分子束外延（MBE）技术，在GaSb（100）衬底上外延生长InAs（4ML）／GaSb（8ML）超晶格（SLs）。研究了生长温度（400～440℃）对超晶格晶体结构和表面形貌的影响。结果表明，420℃生长的超晶格结构完整和表面粗糙度最小，其荧光光谱（PL）峰值波长在约2．54μm处，响应光谱50％截止波长在约2．4μm处。通过控制快门顺序形成InSb和混合两种界面，并发现生长温度强烈影响混合界面InAs／GaSb超晶格结构和表面形貌，而对InSb界面超晶格的影响较小。

Characterization of Phosphorus Diffused ZnO Bulk Single Crystals

Phosphorus was diffused into CVT grown undoped ZnO bulk single crystals at 550 and 800℃ in a closed quartz tube. The P-diffused ZnO single crystals were characterized by the Hall effect, X-ray photoelectron spectroscopy （XPS）, photoluminescence spectroscopy （PL）, and Raman scattering. The P-diffused ZnO single crystals are n-type and have higher free electron concentration than undoped ZnO, especially for the sample diffused at 800℃. The PL measurement reveals defect related visible broad emissions in the range of 420-550nm in the P-diffused ZnO samples. The XPS result suggests that most of the P atoms substitute in the Zn site after they diffuse into the ZnO single crystal at 550℃ ,while the P atom seems to occupy the O site in the ZnO samples diffused at 800℃. A high concentration of shallow donor defect forms in the P-diffused ZnO,resulting in an apparent increase of free electron concentration.

Cl2／Ar／BCl3ICP刻蚀对AIGaN的损伤研究

感应耦合等离子体（ICP）刻蚀在AlGaN基紫外探测器台面制作中起着重要作用，初步研究了Cl2／Ar／BCl3ICP刻蚀对A1GaN材料的损伤。运用X射线光电子能谱（XPS）对ICP刻蚀前后的n型Al0.45Ga0．55N表面进行了分析，并对刻蚀后AlGaN材料在N2气中快速热退火进行了研究。结果表明，在N2气中550℃退火3min对材料的电学性能有明显的改善作用。

正三角形及正方形微光学腔模式特性研究

微谐振腔模式特性研究是利用微腔研制新型光电器件的基础.为了研制出能采用平面工艺制作的定向输出的微腔激光器,文章采用解析和数值模拟方法深入研究了正三角形及正方形光学微腔的模式特性,并得到与数值模拟结果符合非常好的解析场分布及模式波长.对正方形光学微腔,把模式组合成满足正方形对称性的场分布,发现其类WG模式只存在品质因子比它小一个数量级以上的偶然简并模式,因此正方形微腔有利于实现真正的单模工作。

SOI thermo-optic modulator with fast response

Silicon-on-insulator (SOI) technology offers tremendous potential for integration of optoelectronic functionson a silicon wafer. In this letter, a 1 * 1 multimode interference (MMI) Mach-Zender interferometer(MZI) thermo-optic modulator fabricated by wet-etching method is demonstrated. The modulator has anextinction ratio of -11.0 dB, extra loss of -4.9 dB and power consumption of 420 mW. The response timeis less than 30μs.

反应离子刻蚀工艺仿真模型的研究

以SF_6/N_2混合气体对Si反应离子刻蚀工艺研究为例提出干法刻蚀计算机工艺模拟的方法

Defects in GaSb studied by coincidence Doppler broadening measurements

Undoped, Zn-doped and Te-doped GaSb with different concentrations were investigated by positron lifetime spectroscopy (PAS) and the Doppler broadening technique. Detection sensitivity of the latter technique was improved by using a second Ge-detector for the coincident detection of the second annihilation photon. PAS measurement indicated that there were vacancies in these samples. By combining the Doppler broadening measurements, the native acceptor defects in GaSb were identified to be predominantly Ga vacancy (V-Ga) related defects.

Circular crating optical scanning holography

The principle of optical scanning holography with circular gratings (CG) as the scanning field is presented. The generation and reconstruction processes of the scanning holography are described. These processes are numerical simulated by computer and the results are achieved. It is shown that the resolution power of the reconstructed image of CG scanning hologram is higher than that of FZP scanning hologram.

Structural and infrared absorption properties of self-organized InGaAs GaAs quantum dots multilayers

Self-organized InGaAs/GaAs quantum dots (QDs) stacked multilayers have been prepared by solid source molecular beam epitaxy. Cross-sectional transmission electron microscopy shows that the InGaAs QDs are nearly perfectly vertically aligned in the growth direction [100]. The filtering effect on the QDs distribution is found to be the dominant mechanism leading to vertical alignment and a highly uniform size distribution. Moreover, we observe a distinct infrared absorption from the sample in the range of 8.6-10.7 mu m. This indicates the potential of QDs multilayer structure for use as infrared photodetector.

Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001)

Red-emission at similar to 640 nm from self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on GaAs substrate by molecular beam epitaxy (MBE) has been demonstrated. We obtained a double-peak structure of photoluminescence (PL) spectra from quantum dots. An atomic force micrograph (AFM) image for uncapped sample also shows a bimodal distribution of dot sizes. From the temperature and excitation intensity dependence of PL spectra, we found that the double-peak structure of PL spectra from quantum dots was strongly correlated to the two predominant quantum dot families. Taking into account quantum-size effect on the peak energy, we propose that the high (low) energy peak results from a smaller (larger) dot family, and this result is identical with the statistical distribution of dot lateral size from the AFM image.

Photocurrent derivative spectra of ZnCdSe-ZnSe double multi-quantum wells

Photocurrent (PC) spectra of ZnCdSe-ZnSe double multi-quantum wells are measured at different temperature. Its corresponding photocurrent derivative (PCD) spectra are obtained by computing, and the PCD spectra have greatly enhanced the sensitivity of the relative weak PC signals. The polarization dependence of the PC spectra shows that the transitions observed in the PC spectra are heavy-hole related, and the transition energy coincide well with the results obtained by envelope function approximation including strain. The temperature dependence of the photocurrent curves indicates that the thermal activation is the dominant transport mechanism of the carriers in our samples. The concept of saturation temperature region is introduced to explain why the PC spectra have different temperature dependence in the samples with different structure parameters. It is found to be very useful in designing photovoltaic devices.

Structural and photoelectric studies on double barrier quantum well infrared detectors

GaAs/AlAs/GaAlAs double barrier quantum well (DBQW) structures are employed for making the 3 similar to 5 mu m photovoltaic infrared (IR) detectors with a peak detectivity of 5x10(11) cmHz(1/2)/W at 80K. The double crystal x-ray diffraction is combined with synchrotron radiation x-ray analysis to determine the exact thickness of GaAs, AlAs and GaAlAs sublayers. The interband photovoltaic (PV) spect ra of the DBQW sample and the spectral response of the IR photocurrent of the devices are measured directly by edge excitation method, providing the information about spatial separation processes of photogenerated carriers in the multiquantum wells and the distribution of built-in field in the active region.