SOI thermo-optic modulator with fast response
Data(s) |
2003
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Resumo |
Silicon-on-insulator (SOI) technology offers tremendous potential for integration of optoelectronic functionson a silicon wafer. In this letter, a 1 * 1 multimode interference (MMI) Mach-Zender interferometer(MZI) thermo-optic modulator fabricated by wet-etching method is demonstrated. The modulator has anextinction ratio of -11.0 dB, extra loss of -4.9 dB and power consumption of 420 mW. The response timeis less than 30μs. Silicon-on-insulator (SOI) technology offers tremendous potential for integration of optoelectronic functionson a silicon wafer. In this letter, a 1 * 1 multimode interference (MMI) Mach-Zender interferometer(MZI) thermo-optic modulator fabricated by wet-etching method is demonstrated. The modulator has anextinction ratio of -11.0 dB, extra loss of -4.9 dB and power consumption of 420 mW. The response timeis less than 30μs. 于2010-11-23批量导入 zhangdi于2010-11-23 13:06:38导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-23T05:06:38Z (GMT). No. of bitstreams: 1 4779.pdf: 219445 bytes, checksum: e66b8f98f64ead4fc2e8cdcf688b3740 (MD5) Previous issue date: 2003 Research Center for Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Wang Xiaohong;Liu Jingwei;Yan Qingfeng;Chen Shaowu;Yu Jinzhong.SOI thermo-optic modulator with fast response,Chinese Optics Letters,2003,1(9):527-528 |
Palavras-Chave | #光电子学 |
Tipo |
期刊论文 |