Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001)
| Data(s) |
1999
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| Resumo |
Red-emission at similar to 640 nm from self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on GaAs substrate by molecular beam epitaxy (MBE) has been demonstrated. We obtained a double-peak structure of photoluminescence (PL) spectra from quantum dots. An atomic force micrograph (AFM) image for uncapped sample also shows a bimodal distribution of dot sizes. From the temperature and excitation intensity dependence of PL spectra, we found that the double-peak structure of PL spectra from quantum dots was strongly correlated to the two predominant quantum dot families. Taking into account quantum-size effect on the peak energy, we propose that the high (low) energy peak results from a smaller (larger) dot family, and this result is identical with the statistical distribution of dot lateral size from the AFM image. Red-emission at similar to 640 nm from self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots grown on GaAs substrate by molecular beam epitaxy (MBE) has been demonstrated. We obtained a double-peak structure of photoluminescence (PL) spectra from quantum dots. An atomic force micrograph (AFM) image for uncapped sample also shows a bimodal distribution of dot sizes. From the temperature and excitation intensity dependence of PL spectra, we found that the double-peak structure of PL spectra from quantum dots was strongly correlated to the two predominant quantum dot families. Taking into account quantum-size effect on the peak energy, we propose that the high (low) energy peak results from a smaller (larger) dot family, and this result is identical with the statistical distribution of dot lateral size from the AFM image. 于2010-11-15批量导入 zhangdi于2010-11-15 17:02:32导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-15T09:02:32Z (GMT). No. of bitstreams: 1 3013.pdf: 220106 bytes, checksum: 9716a0c0904fdda30ab9aaa4c0675978 (MD5) Previous issue date: 1999 TMS. Chinese Acad Sci, Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China; Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China TMS. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
MINERALS METALS MATERIALS SOC 420 COMMONWEALTH DR, WARRENDALE, PA 15086 USA |
| Fonte |
Zhou W; Xu B; Xu HZ; Liu FQ; Liang JB; Wang ZG; Zhu ZZ; Li GH .Photoluminescence study on coarsening of self-assembled InAlAs quantum dots on GaAs (001) .见：MINERALS METALS MATERIALS SOC .JOURNAL OF ELECTRONIC MATERIALS, 28 (5),420 COMMONWEALTH DR, WARRENDALE, PA 15086 USA ,1999,528-531 |
| Palavras-Chave | #半导体材料 #bimodal distribution #photoluminescence (PL) #quantum-size effect #GE #ENSEMBLES #SI(100) #GROWTH #SHAPE |
| Tipo |
会议论文 |
