Photocurrent derivative spectra of ZnCdSe-ZnSe double multi-quantum wells


Autoria(s): Yu GH; Fan XW; Guan ZP; Zhang JY; Zhao XW; Shen DZ; Zheng ZH; Yang BJ; Jiang DS; Chen YB; Zhu ZM
Data(s)

1999

Resumo

Photocurrent (PC) spectra of ZnCdSe-ZnSe double multi-quantum wells are measured at different temperature. Its corresponding photocurrent derivative (PCD) spectra are obtained by computing, and the PCD spectra have greatly enhanced the sensitivity of the relative weak PC signals. The polarization dependence of the PC spectra shows that the transitions observed in the PC spectra are heavy-hole related, and the transition energy coincide well with the results obtained by envelope function approximation including strain. The temperature dependence of the photocurrent curves indicates that the thermal activation is the dominant transport mechanism of the carriers in our samples. The concept of saturation temperature region is introduced to explain why the PC spectra have different temperature dependence in the samples with different structure parameters. It is found to be very useful in designing photovoltaic devices.

Photocurrent (PC) spectra of ZnCdSe-ZnSe double multi-quantum wells are measured at different temperature. Its corresponding photocurrent derivative (PCD) spectra are obtained by computing, and the PCD spectra have greatly enhanced the sensitivity of the relative weak PC signals. The polarization dependence of the PC spectra shows that the transitions observed in the PC spectra are heavy-hole related, and the transition energy coincide well with the results obtained by envelope function approximation including strain. The temperature dependence of the photocurrent curves indicates that the thermal activation is the dominant transport mechanism of the carriers in our samples. The concept of saturation temperature region is introduced to explain why the PC spectra have different temperature dependence in the samples with different structure parameters. It is found to be very useful in designing photovoltaic devices.

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TMS.

Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

TMS.

Identificador

http://ir.semi.ac.cn/handle/172111/15045

http://www.irgrid.ac.cn/handle/1471x/105240

Idioma(s)

英语

Publicador

MINERALS METALS MATERIALS SOC

420 COMMONWEALTH DR, WARRENDALE, PA 15086 USA

Fonte

Yu GH; Fan XW; Guan ZP; Zhang JY; Zhao XW; Shen DZ; Zheng ZH; Yang BJ; Jiang DS; Chen YB; Zhu ZM .Photocurrent derivative spectra of ZnCdSe-ZnSe double multi-quantum wells .见:MINERALS METALS MATERIALS SOC .JOURNAL OF ELECTRONIC MATERIALS, 28 (5),420 COMMONWEALTH DR, WARRENDALE, PA 15086 USA ,1999,563-566

Palavras-Chave #半导体材料 #double multi-quantum wells #photocurrent spectra #ZnCdSe-ZnSe #SPECTROSCOPY #PHOTOLUMINESCENCE #HETEROSTRUCTURES #PHOTODETECTORS
Tipo

会议论文