Si衬底上无坑洞3C-SiC的外延生长研究

在冷壁式不锈钢超高真空系统上，利用低压化学气相淀积（LPCVD）方法在直径为50 mm的单晶Si(100)和Si(111)晶向衬底上生长出了高取向无坑洞的晶态立方相碳化硅（3C-SiC）外延材料，利用反射高能电子衍射（RHEED）和扫描电镜（SEM）技术详细研究了Si衬底的碳化过程、碳化层的表面形貌及缺陷结构，获得了界面平整光滑、没有空洞形成的3C-SiC外延材料，并采用X- 射线衍射（XRD)、双晶X- 射线衍射（DXRD）和霍尔(Hall）测试等技术研究了外延材料的结构和电学特性。

6H－SiC MOS结构电特性及其辐照效应的研究

对SiC MOS结构辐照引起的电参数退化及其电特性进行了研究。结果说明

Si(100)衬底上n-3C-SiC／p-Si异质结构研究

利用LPCVD方法在Si(100)衬底上获得了3C-SiC外延膜，扫描电子显微镜(SEM)研究表明3C-SiC／p—Si界面平整、光滑，无明显的坑洞形成。研究了以In和Al为接触电极的3C-SiC／p—Si异质结的I—V，C-V特性及I—V特性的温度依赖关系，比较了In电极的3C-SiC／p—Si异质结构和以SiGe作为缓冲层的3C-SiC／SiGe／p—Si异质结构的I—V特性，实验发现引入SiGe缓冲层后，器件的反向击穿电压由40V提高到70V以上。室温下A1电极3C-SiC／p—Si二极管的最大反向击穿电压接近100V，品质因子为1．95。

Heteroepitaxial Growth and Heterojunction Characteristics of Voids-Free n-3C-SiC on p-Si(100)

Highly oriented voids-free 3C-SiC heteroepitaxial layers are grown on φ50mm Si (100) substrates by low pressure chemical vapor deposition (LPCVD). The initial stage of carbonization and the surface morphology of carbonization layers of Si(100) are studied using reflection high energy electron diffraction (RHEED) and scanning electron microscopy (SEM). It is shown that the optimized carbonization temperature for the growth of voids-free 3S-SiC on Si (100) substrates is 1100 ℃. The electrical properties of SiC layers are characterized using Van der Pauw method. The I-V, C-V, and the temperature dependence of I-V characteristics in n-3C-SiC-p-Si heterojunctions with AuGeNi and Al electrical pads are investigated. It is shown that the maximum reverse breakdown voltage of the n-3C-SiC-p-Si heterojunction diodes reaches to 220V at room temperature. These results indicate that the SiC/Si heterojunction diode can be used to fabricate the wide bandgap emitter SiC/Si heterojunction bipolar transistors (HBT's).

Raman Investigatins of 3C-SiC Films Grown on Si (100) and Sapphire (0001) by LPCVD

The Raman measurements have been performed with the back-scattering geometry on the SiC films grown on Si(100) and sapphire (0001) by LPCVD. Typical TO and LO phonon peaks of 3C-SiC were observed for all the samples grown on Si and apphire substrates, indicating the epilayers are 3C-SiC polytype. Using a free-standing 3C-SiC film removed from Si(100) as a free-stress sample, the stresses of 3C-SiC on Si(100) and sapphire (0001) were estimated according to the shift of TO and LO phonons.

Improved Epitaxy of 3C-SiC Layers on Si(100) by New CVD/LPCVD System

Single crystalline 3C-SiC epitaxial layers are grown on φ50mm Si wafers by a new resistively heated CVD/LPCVD system, using SiH_4, C_2H_4 and H_2 as gas precursors. X-ray diffraction and Raman scattering measurements are used to investigate the crystallinity of the grown films. Electrical properties of the epitaxial 3C-SiC layers with thickness of 1 ～ 3μm are measured by Van der Pauw method. The improved Hall mobility reaches the highest value of 470cm~2/(V·s) at the carrier concentration of 7.7 * 10~(17)cm~(-3).

SiC的光谱特性研究

国家自然科学基金

SiC材料及器件研制的进展

作为第三代的半导体材料—SiC具有禁带宽度大、热导率高、电子的饱和漂移速度大、临界击穿电场高和介电常数低等特点，在高频、大功率、耐高温、抗辐照的半导体器件及紫外探测器和短波发光二极管等方面具有广泛的应用前景。文章综述了半导体SiC材料生长及其器件研制的概况。

随激发波长改变的SiC纳米棒的Raman光谱

用不同波长的激光激发得到了SiC纳米棒的Raman光谱，发现谱的形貌与体材料有很大差别，并且随着激发光的改变出现明显变化，认为是由于受Frohlich相互作用影响而引起的共振现象，并据此对实验结果进行了解释。

Si（001）衬底上APCVD生长3C-SiC薄膜的微孪晶及含量

于2010-11-23批量导入

a-SiCx∶H和β-SiC中Er缺陷结构及其1.54μm发光探索

材料科学开放实验室基金,光学信息技术科学教育部开放实验室基金

Si（001）衬底上方形3C-SiC岛的LPCVD生长

于2010-11-23批量导入

6H-SiC高压肖特基势垒二极管

在可商业获得的N型6H-SiC晶片上，通过化学气相淀积，进行同质外延生长，在此结构材料上，通过热蒸发，制作Ni/6H-SiC肖特基势垒二极管。测量并分析了肖特基二极管的电学特性，结果表明，肖特基二极管具有较好的整流特性

高压 Ti/ 6H- SiC肖特基势垒二极管（英文）

在N型6H-SiC外延片上，通过热蒸发，制作Ti/6H-SiC肖特基势垒二极管(SBD)。通过化学气相淀积，进行同质外延生长，详细测量并分析了肖特基二极管的电学特性，该肖特基二极管具有较好的整流特性。反向击穿电压约为400V，室温下，反向电压V_R=200V时，反向漏电流J_R低于1×10~(-4)A/cm~2。采用Ne离子注入形成非晶层，作为边缘终端，二极管的击穿电压增加到约为800V。