110 resultados para Dental Bonding, Chemically-Cured


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Aim: To establish a method for cynomolgus monkey sperm cryopreservation in a chemically defined extender. Methods: Semen samples were collected by electro-ejaculation from four sexually mature male cynomolgus monkeys. The spermatozoa were frozen in straws by liquid nitrogen vapor using egg-yolk-free Tes-Tris (mTTE) synthetic extender and glycerol as cryoprotectant. The effects of glycerol concentration (1%,3%, 5%, 10% and 15% [v/v]) and its equilibration time (10 min, 30 min, 60 min and 90 min) on post-thaw spermatozoa were examined by sperm motility and sperm head membrane integrity. Results: The post-thaw motility and head membrane integrity of spermatozoa were significantly higher (P < 0.05) for 5% glycerol (42.95 +/- 2.55 and 50.39 +/- 2.42, respectively) than those of the other groups (1%: 19.19 +/- 3.22 and 24.84 +/- 3.64; 3%: 34.23 +/- 3.43 and 41.37 +/- 3.42; 10%: 15.68 +/- 2.36 and 21.39 +/- 3.14; 15%: 7.47 +/- 1.44 and 12.90 +/- 2.18). The parameters for 30 min equilibration (42.95 2.55 and 50.39 2.42) were better (P < 0.05) than those of the other groups (10 min: 31.33 +/- 3.06 and 38. 98 +/- 3.31; 60 min: 32.49 +/- 3.86 and 40.01 +/- 4.18; 90 min: 31.16 +/- 3.66 and 38.30 +/- 3.78). Five percent glycerol and 30 min equilibration yielded the highest post-thaw sperm motility and head membrane integrity. Conclusion: Cynomolgus monkey spermatozoa can be successfully cryopreserved in a chemically defined extender, which is related to the concentration and the equilibration time of glycerol.

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Dental variation in the Chinese golden monkey (Rhinopithecus roxellana) is here evaluated by univariate, bivariate, and multivariate analyses. Allometric analyses indicate that canines and P3s are positively, but other dimensions negatively scaled to mandible and maxilla, and to body size. With the exception of the mesiodistal dimensions of I-1 and M-3, and the buccolingual dimension of Pq, mandibular dental variables show similar scaling relative to body size. Analysis of residuals shows that males have significantly larger canine, P-3 and buccolingual dimensions of the postcanine teeth (M-2 and M-3) than females. A significant difference in shape between the sexes is found in the buccolingual dimension of the upper teeth, but not in the mandible. Unlike the situation in some other species, Female golden monkeys do nor exhibit relatively larger postcanine teeth than males, in fact, the reverse is true, especially for M(2)s and M(3)s. The fact that most of the dental variables show low negative allometry to body size might be related a cold environment that has led to the development of larger body size with I-educed energy loss. When the raw data are examined by Discriminant Function Analysis the sexes are clearly distinguishable.

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The crystal structure, mechanical properties and electronic structure of ground state BeH2 are calculated employing the first-principles methods based on the density functional theory. Our calculated structural parameters at equilibrium volume are well consistent with experimental results. Elastic constants, which well obey the mechanical stability criteria, are firstly theoretically acquired. The bulk modulus B, Shear modulus G, Young's modulus E, and Poisson's ratio upsilon are deduced from the elastic constants. The bonding nature in BeH2 is fully interpreted by combining characteristics in band structure, density of states, and charge distribution. The ionicity in the Be-H bond is mainly featured by charge transfer from Be 2s to H 1s atomic orbitals while its covalency is dominated by the hybridization of H 1s and Be 2p states. The Bader analysis of BeH2 and MgH2 are performed to describe the ionic/covalent character quantitatively and we find that about 1.61 (1.6) electrons transfer from each Be (Mg) atom to H atoms.

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A pulsed InGaAsP-Si hybrid laser is fabricated using metal bonding. A novel structure in which the optical coupling and metal bonding areas are transversely separated is employed to integrate the silicon waveguide with an InGaAsP multi-quantum well distributed feedback structure. When electrically pumped at room temperature, the laser operates with a threshold current density of 2.9 kA/cm(2) and a slope efficiency of 0.02 W/A. The 1542 nm laser output exits mainly from the Si waveguide.

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In this work, a novel bonding method using silicate gel as the bonding medium was developed to fabricate an InGaAs narrow-band response resonant cavity enhanced photodetector on a silicon substrate. The bonding was performed at a low temperature of 350 degreesC without any special treatment on bonding surfaces and a Si-based narrow-band response InGaAs photodetector was successfully fabricated, with a quantum efficiency of 34.4% at the resonance wavelength of 1.54 mum, and a full-width at half-maximum of about 27 nm. The photodetector has a linear photoresponse up to 4-mW optical power under 1.5 V or higher reverse bias. The low temperature wafer bonding process demonstrates a great potential in device fabrication.

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The effect of bonding-wire compensation on the capacitances of both the submount and the laser diode is demonstrated in this paper. The measured results show that the small-signal magnitude-frequency responses of the TO packaged laser and photodiode modules can be improved by properly choosing the length of the bonding wire. After packaging, the phase-frequency responses of the laser modules can also be significantly improved (c) 2005 Wiley Periodicals, Inc.

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A SiGe/Si multiple-quantum-well resonant-cavity-enhanced (RCE) photodetector for 1.3 mum operation was fabricated using bonding reflector process. A full width at half maximum (FWHM) of 6 nm and a quantum efficiency of 4.2% at 1314 nm were obtained. Compared to our previously reported SiGe RCE photodetectors fabricated on separation-by-implanted-oxygen wafer, the mirrors in the device can be more easily fabricated and the device can be further optimized. The FWHM is expected to be less than 1 nm and the detector is fit for density wavelength division multiplexing applications. (C) 2002 American Institute of Physics.

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We successfully used the metal mediated-wafer bonding technique in transferring the as-grown cubic GaN LED structure of Si substrate. The absorbing GaAs substrate was removed by using the chemical solutions of NH4OH : H2O2=1 : 10. SEM and PL results show that wafer bonding technique could transfer the cubic GaN epilayers uniformly to Si without affecting the physical and optical properties of epilayers. XRD result shows that there appeared new peaks related to AgGa2 and Ni4N diffraction, indicating that the metals used as adhesive and protective layers interacted with the p-GaN layer during the long annealing process. It is just the reaction that ensures the reliability of the integration of GaN with metal and minor contact resistance on the interface.

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A model has been proposed for describing elastic deformation of wafer surfaces in bonding. The change of the surface shape is studied on the basis of the distribution of the periodic strain field. With the condition of diminishing periodic strain away from the interface, Airy stress function has been found that satisfies the elastic mechanical equilibrium. The result reveals that the wavy interface elastically deforms a spatial wavelength from the interface. (C) 2000 American Institute of Physics. [S0021-8979(00)04219-5].

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The bonding behavior of silicon wafers depends on activation energy for the formation of siloxane bonds. In this article we developed a quantitative model on the dynamics of silicon wafer bonding during annealing. Based on this model, a significant difference in the bonding behaviors is compared quantitatively between the native oxide bonding interface and the thermal oxide bonding interface. The results indicate that the bonding strength of the native oxide interface increases with temperature much more rapidly than that of the thermal oxide interface. (C) 2000 American Institute of Physics. [S0021-8979(00)05520-1].

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A novel low temperature direct wafer bonding technology employing vacuum-cavity pre-bonding is proposed and applied in bonding of InGaAs/Si couple wafers under 300 degrees C and InP/GaAs couple wafers under 350 degrees C. Aligning accuracy of 0.5 mu m is achieved. During wafer bonding process the pressure on the couple wafers is 10MPa. The interface energy is sufficiently high to allow thinning of the wafers down from 350um to about 100um. And the tensile strength test indicates the bonding energy of bonded samples is about equal to the bonded samples at 550 degrees C.

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A 1.55-mu m hybrid InGaAsP-Si laser was fabricated by the selective-area metal bonding method. Two Si blocking stripes, each with an excess-metals accommodated space, were used to separate the optical coupling area and the metal bonding areas. In such a structure, the air gap between the InGaAsP structure and Si waveguide has been reduced to be negligible. The laser operates with a threshold current density of 1.7 kA/cm(2) and a slope efficiency of 0.05 W/A under pulsed-wave operation. Room-temperature continuous lasing with a maximum output power of 0.45 mW is realized.

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本论文分为两部分:1. 综述部分(第一章),介绍了可见光固化复合树脂的组成、分类、性能以及应用;评述了复合树脂的研究进展。2. 实验部分(第二章至第七章),包括以下几个方面的内容:无机填料的制备与硅烷化处理研究;树脂基质固化过程的研究;可见光固化复合树脂的制备及物理机械性能的评价;研究不同浸泡液对复合树脂吸水性、挠曲强度、弯曲弹性模量以及复合树脂单体洗出量的影响,并探讨了这些物理机械性能与复合树脂组成成分的关系。 无机填料能赋予复合树脂良好的物理机械性能。本论文通过烧结法和醇盐水解法分别制备了1 µm和0.75 μm的无机填料,利用醇盐水解法成功制备了纳米级二氧化硅,最终制得强度符合临床要求的复合树脂,为工业化生产提供了依据。 无机填料硅烷化处理效果的好坏对复合树脂的各种性能会产生很大影响,本论文对无机填料进行硅烷化处理,引入了比商品化产品更多的硅烷偶联剂,而且实验中硅烷化处理的8235玻璃粉表面既有化学包覆又有物理包覆的硅烷偶联剂。渗透实验表明3-甲基丙烯酰氧丙基三氯硅烷处理的无机填料表面疏水性比3-甲基丙烯酰氧丙基三甲氧基硅烷强。 膨胀单体可以用来减小甚至消除复合树脂聚合过程的体积收缩,论文第四章尝试用螺双内酯作为复合树脂的单体,提出了一种新型的先阳离子聚合后阴离子聚合的联合引发聚合过程。论文第五、六章用环氧化芳香族超支化聚合物制备了新型可见光固化复合树脂,研究结果表明:①环氧化芳香族超支化聚合物的加入,环氧树脂基复合树脂的挠曲强度和弯曲弹性模量增大;②收缩变小;③吸水量变大;④环氧树脂的转化率降低;⑤玻璃化转变温度降低。环氧化芳香族超支化聚合物能够增强增韧脂肪族环氧树脂,如果对其进行必要的改性,所得复合树脂有可能被应用到牙科修复中。 不同浸泡液对复合树脂的物理机械性能和生物相容性会产生不同的影响,论文第七章系统研究了不同浸泡液对复合树脂各种物理机械性能的影响。结果表明:① 三种浸泡液对复合树脂各种性能的影响随浸泡液种类的不同而不同,其中乙醇/水对复合树脂的影响最严重;②即使在同一浸泡液中,不同组成的复合树脂也有不同的物理机械性能。

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After illumination with 1-1.3 eV photons during cooling-down, metastable PH modes are observed by IR absorption at 5 K in semi-insulating InP:Fe. They correlate with the photo-injection of holes, but not with a change of the charge state of the K-related centres present at equilibrium. They are explained by a change of the bonding of H, induced by hole trapping, from IR-inactive centres to PH-containing centres, stable only below 80 K. One metastable centre has well-defined geometrical parameters and the other one could be located in a region near from the interface with (Fe,P) precipitates.