Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding

A pulsed InGaAsP-Si hybrid laser is fabricated using metal bonding. A novel structure in which the optical coupling and metal bonding areas are transversely separated is employed to integrate the silicon waveguide with an InGaAsP multi-quantum well distributed feedback structure. When electrically pumped at room temperature, the laser operates with a threshold current density of 2.9 kA/cm(2) and a slope efficiency of 0.02 W/A. The 1542 nm laser output exits mainly from the Si waveguide.

National Natural Science Foundation of China 10874001 507320011067401260877022National Basic Research Program of China 2007CB613402 Supported by the National Natural Science Foundation of China under Grant Nos 10874001, 50732001, 10674012 and 60877022, and the National Basic Research Program of China under Grant No 2007CB613402.