Fabrication of 1.55-mu m Si-based resonant cavity enhanced photodetectors using sol-gel bonding
Data(s) |
2004
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Resumo |
In this work, a novel bonding method using silicate gel as the bonding medium was developed to fabricate an InGaAs narrow-band response resonant cavity enhanced photodetector on a silicon substrate. The bonding was performed at a low temperature of 350 degreesC without any special treatment on bonding surfaces and a Si-based narrow-band response InGaAs photodetector was successfully fabricated, with a quantum efficiency of 34.4% at the resonance wavelength of 1.54 mum, and a full-width at half-maximum of about 27 nm. The photodetector has a linear photoresponse up to 4-mW optical power under 1.5 V or higher reverse bias. The low temperature wafer bonding process demonstrates a great potential in device fabrication. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Mao, RW; Li, CB; Zuo, YH; Cheng, BW; Teng, XG; Luo, LP; Yu, JZ; Wang, QM .Fabrication of 1.55-mu m Si-based resonant cavity enhanced photodetectors using sol-gel bonding ,IEEE PHOTONICS TECHNOLOGY LETTERS,AUG 2004,16 (8):1930-1932 |
Palavras-Chave | #光电子学 #bonding medium |
Tipo |
期刊论文 |