Direct Wafer Bonding Technology employing vacuum-cavity pre-bonding
| Data(s) |
2006
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|---|---|
| Resumo |
A novel low temperature direct wafer bonding technology employing vacuum-cavity pre-bonding is proposed and applied in bonding of InGaAs/Si couple wafers under 300 degrees C and InP/GaAs couple wafers under 350 degrees C. Aligning accuracy of 0.5 mu m is achieved. During wafer bonding process the pressure on the couple wafers is 10MPa. The interface energy is sufficiently high to allow thinning of the wafers down from 350um to about 100um. And the tensile strength test indicates the bonding energy of bonded samples is about equal to the bonded samples at 550 degrees C. A novel low temperature direct wafer bonding technology employing vacuum-cavity pre-bonding is proposed and applied in bonding of InGaAs/Si couple wafers under 300 degrees C and InP/GaAs couple wafers under 350 degrees C. Aligning accuracy of 0.5 mu m is achieved. During wafer bonding process the pressure on the couple wafers is 10MPa. The interface energy is sufficiently high to allow thinning of the wafers down from 350um to about 100um. And the tensile strength test indicates the bonding energy of bonded samples is about equal to the bonded samples at 550 degrees C. zhangdi于2010-03-29批量导入 zhangdi于2010-03-29批量导入 Opt Soc Korea.; SPIE.; Korea Assoc Photon Ind Dev.; Gwangju City.; Chinese Opt Soc.; IEEE Commun Soc.; IEEE Laser & Electro Opt Soc.; Opt Soc Amer.; Opt Soc Japan.; Inst Elect Engineers Korea.; Korean Inst Commun Sci. Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China Opt Soc Korea.; SPIE.; Korea Assoc Photon Ind Dev.; Gwangju City.; Chinese Opt Soc.; IEEE Commun Soc.; IEEE Laser & Electro Opt Soc.; Opt Soc Amer.; Opt Soc Japan.; Inst Elect Engineers Korea.; Korean Inst Commun Sci. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
SPIE-INT SOC OPTICAL ENGINEERING 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA |
| Fonte |
Yang, GH (Yang, Guohua); He, GR (He, Guorong); Zheng, WH (Zheng, Wanhua); Chen, LH (Chen, Lianghui) .Direct Wafer Bonding Technology employing vacuum-cavity pre-bonding .见：SPIE-INT SOC OPTICAL ENGINEERING .Optoeletronic Materials and Devices丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE) ,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2006,Pts 1 and 2 6352: U1388-U1395 Part 1-2 |
| Palavras-Chave | #光电子学 |
| Tipo |
会议论文 |
