AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers - art. no. 68410S

We investigated AlGaN layers grown by metalorganic chemical vapor deposition (MOCVD) on high temperature (HT-)GaN and AlGaN buffer layers. On GaN buffer layer, there are a lot of surface cracking because of tensile strain in subsequent AlGaN epilayers. On HT-AlGaN buffer layer, not only cracks but also high densities rounded pits present, which is related to the high density of coalescence boundaries in HT-AlGaN growth process.The insertion of interlayer (IL) between AlGaN and the GaN pseudosubstrate can not only avoid cracking by modifying the strain status of the epilayer structure, but also improved Al incorporation efficiency and lead to phase-separation. And we also found the growth temperature of IL is a critical parameter for crystalline quality of subsequent AlGaN epilayer. Low temperature (LT-) A1N IL lead to a inferior quality in subsequent AlGaN epilayers.

Correlation Between Lattice Strain and Energy Gap Bowing of AlxGa1-xN Epitaxial Thin Films

The correlation between the energy band-gap of AlxGa1-xN epitaxial thin films and lattice strain was investigated using both High Resolution X-ray Diffraction (HRXRD) and Spectroscopic Ellipsometry (SE). The Al fraction, lattice relaxation, and elastic lattice strain were determined for all AlxGa1-xN epilayers, and the energy gap as well. Given the type of intermediate layer, a correlation trend was found between energy band-gap bowing parameter and lattice mismatch, the higher the lattice mismatch is, the smaller the bowing parameter (b) will be.

Growth of high quality semi-insulating InP single crystal by suppression of compensation defects

Deep level defects in as-grown and annealed SI-InP samples were investigated by thermally stimulated current spectroscopy. Correlations between electrical property, compensation ratio, thermal stability and deep defect concentration in SI-InP were revealed. An optimized crystal growth condition for high quality SI-InP was demonstrated based on the experimental results.

Improvement of the electrical property of semi-insulating InP by suppression of compensation defects

Semi-insulating (SI) InP obtained by iron phosphide ambient annealing has very low concentration of deep level defects and better electrical property than SI-InP annealed in phosphorus ambient. The defect suppression phenomenon correlates with Fe diffusion and substitution in the annealing process. Analysis of the experimental result suggests that a high activation ratio of incorporated Fe in InP has an effect of defect suppression in Fe-doped and Fe-diffused SI-InP.

Strain-Compensated InGaAs/InAlAs Quantum Cascade Detector of 4.5 mu m Operating at Room Temperature

We present a strain-compensated InP-based InGaAs/InAlAs photovoltaic quantum cascade detector grown by solid source molecular beam epitaxy. The detector is based on a vertical intersubband transition and electron transfer on a cascade of quantum levels which is designed to provide longitudinal optical phonon extraction stairs. By careful structure design and growth, the whole epilayer has a residual strain toward InP substrate of only -2.8 x 10(-4). A clear narrow band detection spectrum centered at 4.5 mu m has been observed above room temperature for a device with 200 x 200 mu m(2) square mesa.

Establishment and characterization of dual-species biofilms formed between a 3,5-dinitrobenzoic-degrading strain and bacteria with high biofilm-forming capabilities

In this study, the possibility of establishing a dual-species biofilm from a bacterium with a high biofilm-forming capability and a 3,5-dinitrobenzoic acid (3,5-DNBA)-degrading bacterium, Comamonas testosteroni A3, was investigated. Our results showed that the combinations of strain A3 with each of five strains with a high biofilm-forming capability (Pseudomonas sp. M8, Pseudomonas putida M9, Bacillus cereus M19, Pseudomonas plecoglossicida M21 and Aeromonas hydrophila M22) presented different levels of enhancement regarding biofilm-forming capability. Among these culture combinations, the 24-h dual-species biofilms established by C. testosteroni A3 with P. putida M9 and A. hydrophila M22 showed the strongest resistance to 3,5-DNBA shock loading, as demonstrated by six successive replacements with DMM2 synthetic wastewater. The degradation rates of 3,5-DNBA by these two culture combinations reached 63.3-91.6% and 70.7-89.4%, respectively, within 6 h of every replacement. Using the gfp-tagged strain M22 and confocal laser scanning microscopy, the immobilization of A3 cells in the dual-species biofilm was confirmed. We thus demonstrated that, during wastewater treatment processes, it is possible to immobilize degrader bacteria with bacteria with a high biofilm-forming capability and to enable them to develop into the mixed microbial flora. This may be a simple and economical method that represents a novel strategy for effective bioaugmentation.

Spectrum broadening and reshaping via gain compensation of fiber amplifier

We report a novel technique to broaden and reshape the spectrum of picosecond laser pulse based on the seeder of gain switch laser diode and Yb(3+)-doped fiber amplifier (YDFA). From compensating the seed spectrum with the gain of YDFA, the seed pulse of 7 nm bandwidth is broadened to 20 nm, and the flat top spectral shape is obtained as well. A self-made fiber coupled tunable filter is used to realize the tunable output laser with the wavelength range from 1053 nm to 1073 nm and the line width of 1.4 nm.

Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques

The composition and stain distributions in the InGaN epitaxial films are jointly measured by employing various x-ray diffraction (XRD) techniques, including out-of-plane XRD at special planes, in-plane grazing incidence XRD, and reciprocal space mapping (RSM). It is confirmed that the measurement of (204) reflection allows a rapid access to estimate the composition without considering the influence of biaxial strain. The two-dimensional RSM checks composition and degree of strain relaxation jointly, revealing an inhomogeneous strain distribution profile along the growth direction. As the film thickness increases from 100 nm to 450 nm, the strain status of InGaN films gradually transfers from almost fully strained to fully relaxed state and then more in atoms incorporate into the film, while the near-interface region of InGaN films remains pseudomorphic to GaN.

Near-Infrared Femtosecond Laser for Studying the Strain in Si1-xGex Alloy Films via Second-Harmonic Generation

The second-harmonic generation (SHG) from Si1-xGex alloy films has been investigated by near-infrared femtosecond laser. Recognized by s-out polarized SHG intensity versus rotational angle of sample, the crystal symmetry of the fully strained Si0.83Ge0.17 alloy is found changed from the O-h to the C-2 point group due to the inhomogeneity of the strain. Calibrated by double crystal X-ray diffraction, the strain-induced chi((2)) is estimated at 5.7 x 10(-7) esu. According to the analysis on p-in/s-out SHG, the strain-relaxed Si0.10Ge0.90 alloy film is confirmed to be not fully relaxed, and the remaining strain is quantitatively determined to be around 0.1%.

Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties

The evolution of strain and structural properties of thick epitaxial InGaN layers grown on GaN with different thicknesses are investigated. It is found that, with increase in InGaN thickness, plastic relaxation via misfit dislocation generation becomes a more important strain relaxation mechanism. Accompanied with the relaxation of compressive strain, the In composition of InGaN layer increases and induces an apparent red-shift of the cathodoluminescence peak of the InGaN layer. On the other hand, the plastic relaxation process results in a high defect density, which degrades the structural and optical properties of InGaN layers. A transition layer region with both strain and In composition gradients is found to exist in the 450-nm-thick InGaN layer.

ESTIMATION OF THE STRAIN STATE OF GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES BY DOUBLE-CRYSTAL X-RAY-DIFFRACTION

20-period strained-layer superlattices of nominal composition and width Ge0.2Si0.8 (5 nm)/Si(25 nm) and Ge0.5Si0.5 (5 nm)/Si(25 nm) were studied by double-crystal X-ray diffraction. The Ge content x was determined by computer simulation of the diffraction features from the superlattice. This method is shown to be independent of the relaxation of the superlattice. Alternatively, x can be obtained from the measured difference DELTAa/a in lattice spacing perpendicular to the growth plane. It is sensitive to the relaxation. Comparing the results obtained in these two different ways, information about the relaxation of the superlattices can be obtained.

ELECTRONIC-STRUCTURES OF QUANTUM WIRES FORMED BY LATERAL STRAIN

The electronic structures of quantum wires formed by lateral strain are studied in the framework of the effective-mass envelope-function method. The hole energy levels, wave functions, and optical transition matrix elements are calculated for the real quantum-wire structure, and the results are compared with experiment. It is found that one-dimensional confinement effects exist for both electronic and hole states related to the n (001) = 1 state. The lateral strained confinement causes luminescence-peak redshifts and polarization anisotropy, and the anisotropy is more noticeable than that in the unstrained case. The variation of hole energy levels with well widths in the [110] and [001] directions and wave vector along the [110BAR] direction are also obtained.

Damage removal and strain relaxation in As+-implanted Si0.57Ge0.43 epilayers grown by gas source molecular beam epitaxy

The damage removal and strain relaxation in the As+-implanted Si0.57Ge0.43 epilayers were studied by double-crystal x-ray diffractometry and transmission electron microscopy. The results presented in this paper indicate that rapid thermal annealing at temperatures higher than 950 degrees C results in complete removal of irradiation damage accompained by the formation of GeAs precipitates which enhance the removal process of dislocations.

Self-formed InGaAs/GaAs quantum dot superlattice and direct observation on strain distribution in the capped superlattice

We have demonstrated a 20 period dislocation-free InGaAs/GaAs quantum dot superlattice which is self-formed by the strain from the superlattice taken as a whole rather than by the strain from the strained single layer. The island formation does not take place while growing the corresponding strained single layer. From the variation of the average dot height in each layer, the strain distribution and relaxation process in the capped superlattice have been examined. It is found that the strain is not uniformly distributed and the greatest strains occur at two interfaces between the superlattice and the substrate and the cap layer in the capped superlattice. (C) 1997 American Institute of Physics.