Correlation Between Lattice Strain and Energy Gap Bowing of AlxGa1-xN Epitaxial Thin Films

The correlation between the energy band-gap of AlxGa1-xN epitaxial thin films and lattice strain was investigated using both High Resolution X-ray Diffraction (HRXRD) and Spectroscopic Ellipsometry (SE). The Al fraction, lattice relaxation, and elastic lattice strain were determined for all AlxGa1-xN epilayers, and the energy gap as well. Given the type of intermediate layer, a correlation trend was found between energy band-gap bowing parameter and lattice mismatch, the higher the lattice mismatch is, the smaller the bowing parameter (b) will be.

The correlation between the energy band-gap of AlxGa1-xN epitaxial thin films and lattice strain was investigated using both High Resolution X-ray Diffraction (HRXRD) and Spectroscopic Ellipsometry (SE). The Al fraction, lattice relaxation, and elastic lattice strain were determined for all AlxGa1-xN epilayers, and the energy gap as well. Given the type of intermediate layer, a correlation trend was found between energy band-gap bowing parameter and lattice mismatch, the higher the lattice mismatch is, the smaller the bowing parameter (b) will be.

zhangdi于2010-03-09批量导入

zhangdi于2010-03-09批量导入

Mat Res Soc.; Chinese Mat Res Soc.

[Zhao, Lan; Lu, Zhengxiong; Cheng, Caijing; Zhang, Xiangfeng; Sun, Weiguo] Luoyang Optoelect Inst, Luoyang, Peoples R China; [Zhao, Degang; Zhu, Jianjun; Sun, Baojuan] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China; [Qu, Bo] Jordan Valley Semicond UK Ltd, Durham, England

Mat Res Soc.; Chinese Mat Res Soc.