Strain-Compensated InGaAs/InAlAs Quantum Cascade Detector of 4.5 mu m Operating at Room Temperature


Autoria(s): Kong N (Kong Ning); Liu JQ (Liu Jun-Qi); Li L (Li Lu); Liu FQ (Liu Feng-Qi); Wang LJ (Wang Li-Jun); Wang ZG (Wang Zhan-Guo)
Data(s)

2010

Resumo

We present a strain-compensated InP-based InGaAs/InAlAs photovoltaic quantum cascade detector grown by solid source molecular beam epitaxy. The detector is based on a vertical intersubband transition and electron transfer on a cascade of quantum levels which is designed to provide longitudinal optical phonon extraction stairs. By careful structure design and growth, the whole epilayer has a residual strain toward InP substrate of only -2.8 x 10(-4). A clear narrow band detection spectrum centered at 4.5 mu m has been observed above room temperature for a device with 200 x 200 mu m(2) square mesa.

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National Science Fund for Distinguished Young Scholars of China 60525406 ; National Natural Science Foundation of China 60736031 60806018 60906026 10990100; National Basic Research Program of China 2006CB604903 ; National High-tech R&D Program of China 2007AA03Z446 2009AA03Z403

其它

National Science Fund for Distinguished Young Scholars of China 60525406 ; National Natural Science Foundation of China 60736031 60806018 60906026 10990100; National Basic Research Program of China 2006CB604903 ; National High-tech R&D Program of China 2007AA03Z446 2009AA03Z403

Identificador

http://ir.semi.ac.cn/handle/172111/11187

http://www.irgrid.ac.cn/handle/1471x/66218

Idioma(s)

英语

Fonte

Kong N (Kong Ning), Liu JQ (Liu Jun-Qi), Li L (Li Lu), Liu FQ (Liu Feng-Qi), Wang LJ (Wang Li-Jun), Wang ZG (Wang Zhan-Guo).Strain-Compensated InGaAs/InAlAs Quantum Cascade Detector of 4.5 mu m Operating at Room Temperature.CHINESE PHYSICS LETTERS,2010,27(3):Art. No. 038501

Palavras-Chave #半导体材料 #WELL INFRARED PHOTODETECTORS #LASER
Tipo

期刊论文