Near-Infrared Femtosecond Laser for Studying the Strain in Si1-xGex Alloy Films via Second-Harmonic Generation

The second-harmonic generation (SHG) from Si1-xGex alloy films has been investigated by near-infrared femtosecond laser. Recognized by s-out polarized SHG intensity versus rotational angle of sample, the crystal symmetry of the fully strained Si0.83Ge0.17 alloy is found changed from the O-h to the C-2 point group due to the inhomogeneity of the strain. Calibrated by double crystal X-ray diffraction, the strain-induced chi((2)) is estimated at 5.7 x 10(-7) esu. According to the analysis on p-in/s-out SHG, the strain-relaxed Si0.10Ge0.90 alloy film is confirmed to be not fully relaxed, and the remaining strain is quantitatively determined to be around 0.1%.

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Made available in DSpace on 2010-12-12T08:06:36Z (GMT). No. of bitstreams: 1 Near-Infrared Femtosecond Laser for Studying the Strain in Si1-xGex Alloy Films via Second-Harmonic Generation.pdf: 797213 bytes, checksum: 3a9976a19b083f7790acb30118f66979 (MD5) Previous issue date: 2010

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