Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties

The evolution of strain and structural properties of thick epitaxial InGaN layers grown on GaN with different thicknesses are investigated. It is found that, with increase in InGaN thickness, plastic relaxation via misfit dislocation generation becomes a more important strain relaxation mechanism. Accompanied with the relaxation of compressive strain, the In composition of InGaN layer increases and induces an apparent red-shift of the cathodoluminescence peak of the InGaN layer. On the other hand, the plastic relaxation process results in a high defect density, which degrades the structural and optical properties of InGaN layers. A transition layer region with both strain and In composition gradients is found to exist in the 450-nm-thick InGaN layer.

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This work was supported by the National Natural Science Fund of China (Grant nos. 60976045, 60506001, 60836003 and 60776047), National Basic Research Program (2007CB936700) and the National Science Foundation for Distinguished Young Scholars under Grant no. 60925017. The authors would like to thank the Beijing Synchrotron Radiation Facility (BSRF) for assistance in thin film characterization.

国内

This work was supported by the National Natural Science Fund of China (Grant nos. 60976045, 60506001, 60836003 and 60776047), National Basic Research Program (2007CB936700) and the National Science Foundation for Distinguished Young Scholars under Grant no. 60925017. The authors would like to thank the Beijing Synchrotron Radiation Facility (BSRF) for assistance in thin film characterization.