Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire

The stress states in unintentionally doped GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire, and their effects on optical properties of GaN films were investigated by means of room-temperature confocal micro-Raman scattering and photoluminescence techniques. Relatively large tensile stress exists in GaN epilayers grown on Si and 6H-SiC while a small compressive stress appears in the film grown on sapphire. The latter indicates effective strain relaxation in the GaN buffer layer inserted in the GaN/sapphire sample, while the 50-nm-thick AlN buffer adopted in the GaN/Si sample remains highly strained. The analysis shows that the thermal mismatch between the epilayers and the substrates plays a major role in determining the residual strain in the films. Finally, a linear coefficient of 21.1+/-3.2 meV/GPa characterizing the relationship between the luminescent bandgap and the biaxial stress of the GaN films is obtained. (C) 2003 American Institute of Physics.

微碳深冲钢板的非｛111｝织构特征及其对r,△r值的影响

From St15 micro-carbon deep drawing steel sheets, two sets of samples with (r) over bar variant and Deltar constant, and (r) over bar constant and Deltar variant, were selected to carry out texture measurement and ODF analysis. A description of the texture characteristics and an investigation on the effect of the main textures on the (r) over bar and Deltar values were given. The results show that in the tested steel sheets no desired gamma < 111 > parallel to ND orientation line appears but gamma' orientation line located at <()over bar>=0-90 degrees, theta =19 degrees and phi =45 degrees, and L orientation line located around gamma < 111 > parallel to ND orientation line which spirally rotates from Psi =0 degrees, theta =54.7 degrees and phi =62.7 degrees to Psi =90 degrees, theta =40 degrees and phi =45 degrees occur. Among them, the L orientation line has a main influence on the (r) over bar value and the stronger the texture density, the higher the (r) over bar value is, but is somewhat detrimental to the Deltar value; at the same time, the gamma' orientation line has a major effect on the Deltar value in an opposite way, but is somewhat deteriorative to the (r) over bar value. A strong L orientation line superposed by a relatively strong gamma' orientation line may produce fine (r) over bar and Deltar values.

Adlayer Structures of DL-Homocysteine and L-Homocysteine Thiolactone on Au(111) Surface: an in situ STM Study

The adsorption Of DL-homocysteine (Hcy) and L-homocysteine thiolactone (HTL) on Au(1 1 1) electrode was investigated in 0.1 M HClO4 by cyclic voltammetry and in situ scanning tunneling microscopy (STM). Hcy and HTL molecules formed highly ordered adlayers on Au(1 1 1) surface. High-resolution STM images revealed the orientation and packing arrangement in the ordered adlayers. Hcy molecules formed (2root3 x 3root3)R30degrees adlayer structure and H-bonds between carboxyl groups were assumed to be responsible for the origin of tail-to-tail or head-to-head molecular arrangement, while HTL molecules formed (4 x 6) adlayer structure, and two different orientations and appearances in the ordered adlayer were found. Structural models were proposed for the two adlayers.

Electrochemical, spectroscopic and SPM evidence for the controlled formation of self-assembled monolayers and organised multilayers of ferrocenyl alkyl thiols on Au(111)

Organised multilayers were formed from the controlled self-assembly of ferrocene alkyl thiols on Au(111) surfaces. The control was accomplished by increasing the concentration of the thiol solutions used for the assembly. Cyclic voltammetry, ellipsometry, scanning probe microscopy (STM and AFM) and in situ FTIR spectroscopy were used to probe the differences between mono- and multilayers of the same compounds. Electrochemical desorption studies confirmed that the multilayer structure is attached to the surface via one monolayer. The electrochemical behaviour of the multilayers indicated the presence of more than one controlling factor during the oxidation step, whereas the reduction was kinetically controlled which contrasts with the behaviour of monolayers, which exhibit kinetic control for the oxidation and reduction steps. Conventional and imaging ellipsometry confirmed that multilayers with well-defined increments in thickness could be produced. However, STM indicated that at the monolayer stage, the thiols used promote the mobility of Au atoms on the surface. It is very likely that the multilayer structure is held together through hydrogen bonding. To the best of out knowledge, this is the first example of a controlled one-step growth of multilayers of ferrocenyl alkyl thiols using self-assembly techniques.

Si（111）衬底上ZnO薄膜的磁控溅射法制备及表征

采用磁控溅射法在(111)单晶硅衬底上沉积了ZnO薄膜，并研究了退火温度对ZnO薄膜晶体质量、晶粒度大小、应力和光致发光谱的影响。X射线衍射(XRD)表明薄膜为高度c轴择优取向。不同退火温度下的ZnO薄膜应力有明显变化。应力分布最为均匀的退火温度为500℃。室温下对ZnO薄膜进行了光谱分析，可观测到明显的紫光发射(波长为380nm左右)。实验结果表明，用磁控溅射法在单晶硅衬底上能获得高质量的ZnO薄膜。

退火对Si（111）衬底上ZnO薄膜的结构和发光特性的影响

采用磁控溅射法在硅（111）衬底上制备了C轴高度取向的ZnO薄膜，并研究了退火温度和氧气气氛对ZnO薄膜晶体质量、晶粒度大小和光致发光谱的影响。X射线衍射表明，所有薄膜均为高度C轴择优取向，当退火温度低于900℃时，随着退火温度的升高，薄膜的取向性和结晶度都明显提高。室温下对ZnO薄膜进行了光谱分析，退火后的样品均可观测到明显的紫光发射。在一定的退火温度范围内，还可以观测到明显的紫外双峰。空气中退火的样品，当退火温度达到或高于600℃还可观测到绿光发射。实验结果表明，发光峰强度随退火温度和氧气气氛不同而不

土壤有机碳和氮的分布及其对气候变化的响应

碳、氮不仅是生物体必需的营养元素，也是重要的生态元素。大气中温室气体C02、N2O等浓度的增加使得碳、氮的生物地球化学循环及其温室气体的减缓排放措施研究成为全球变化研究中的热点问题。 土壤是陆地生态系统的核心，是连接大气圈、水圈、生物圈、岩石圈的纽带;它是陆生生物赖以生存的物质基础，是陆地生态系统中物质与能量交换的重要场所，其在全球碳、氮循环中起着十分重要的作用。一方面，土壤有机碳和氮的含量与分布直接关系到生态系统的生产力和生态系统的规模，同时土壤有机碳和氮的转化与迁移又直接影响到温室气体的组成与含量。而土壤本身又是生态系统中生物与环境相互作用的产物。因此，研究土壤有机碳和氮的分布、转化及其对全球变化的响应对于正确理解碳、氮的生物地球化学循环及其对全球变化的响应制定应对策略具有重要意义。 全球变化的陆地样带是从机理上理解陆地生态系统对全球变化的响应，预测全球变化对陆地生态系统的可能影响，实现预警、调节和减少全球变化不良影响，科学地规划和管理陆地生态系统的有效平台。目前，国际地圈一生物圈计划(IGBP)基于不同地区全球变化驱动因素的不同以及全球变化的潜在反馈作用强度的不同，在全球4个关键地区共启动了15条IG8P陆地样带。以水分为主要驱动力的中国东北样带(NECT：Northeast China Transect)即为IGBP的陆地样带之一。 本文以中国东北样带为平台，基于2001年对中国东北样带科学考察所采土壤样品的实测结果和气候资料分析了土壤有机碳和氮的梯度分布及其与土壤、气候等因子之间的关系;借助C02浓度升高和不同土壤湿度的模拟试验探讨了土壤有机碳和氮对气候变化的响应;根据作物残体还田的长期定位试验和盆栽试验研究了作物残体还田对土壤有机碳和氮转化的影响，讨论了农田生态系统通过作物残体还田对减缓温室气体排放的效应。主要结果和结论如下： (1).样带表层土壤有机碳平均为22.3土4.93 g．kg-1，下层土壤有机碳平均为8.9±1.20 g．kg-1。样带表层土壤活性有机碳平均为3.52±0.881 g.kg-1，占表层土壤有机碳的13.1±0.78%;下层土壤活性有机碳平均为1.14±0.250g.kg-l，占下层土壤有机碳的10.9±0.79%。样带土壤活性有机碳与土壤有机碳之间呈极显著正相关关系(相关系数r=0.993，P<0.001)。 (2).不同生态类型土壤有机碳和活性有机碳含量不同。中国东北样带东部(经度126°～131°)为温带针阔混交林山地，植被种类极其丰富，地带性土壤为暗棕壤，并且多为自然土壤，土壤有机碳和活性有机碳含量较高。但由于采样区局部地理环境、植被结构及人类干扰程度的不同，土壤有机碳和活性有机碳含量变异较大，平均为61.9±13.84 g．kg-1和10. 88±2.236g. kg-1。样带中部（经度119°～126°）为松辽平原栎林草原、农田区和大兴安岭山地草甸草原区，属半湿润向半干旱过渡的气候。该区域主要土壤类型为黑土、黑钙土、盐化或碱化草甸土及风沙土，土壤沙化、碱化严重，土壤有机碳和活性有机碳含量明显降低，平均为10.5±1.97 g．kg-l和1. 35±0.327 g．kg-1。样带中西部（经度113°～119°）为内蒙古高原草甸草原和典型草原区域，具有典型的半干旱气候特征。该区地带性土壤为栗钙土，局部丘陵区分布黑钙土，土壤有机碳和活性有机碳含量为14.6±1.65 g．kg-1和2.07±0.342g.kg-1。样带西部（经度111°～113°）为内蒙古高原荒漠草原区域，地带性土壤为棕钙土，土壤较为贫瘠，其有机碳和活性有机碳含量最低，平均为7.99±1.51 g．kg-1和0.51±0.216 g．kg-1。从总的趋势看，样带表层土壤有机碳和活性有机碳的梯度分布趋势一致，都呈现出随经度降低而下降的趋势，局部因土壤退化而出现波动。 (3).样带土壤有机碳和活性有机碳与土壤全量氮、磷、硫、锌及有效氮、磷、钾、锰、锌等均呈显著或极显著相关关系，与土壤PH、容重、持水量及孔隙度也呈显著或极显著相关关系。土壤表层有机碳和活性有机碳与降水量之间具有正的相关关系，其相关系数为r=0.677（P<0.001）和r=0.712（P<0.001）。但下层土壤有机碳和活性有机碳与降水量之间没有显著的相关关系。 (4).样带下层土壤有机碳和活性有机碳与经度之间仍具有显著的相关关系（r=0.454，P=0.026; r=0.473，P=0.020）。样带下层土壤有机碳和活性有机碳的变异小于表层。不同的生态系统，下层土壤有机碳和活性有机碳与表层土壤有机碳和活性有机碳的比率不同。总的来看，土壤活性有机碳含量随深度的增加而下降的幅度大于土壤有机碳。 (5).短期培养条件下，CO2浓度升高及干旱胁迫下，土壤有机碳的变化不大，其变异系数为1.28%;相比较之下，土壤活性有机碳对气候变化比较敏感，其变异系数为29.67%。不同土壤湿度，土壤活性有机碳含量发生变异的幅度因CO2浓度升高而降低。 (6).样带土壤全氮和有效氮与经度呈极显著正相关，其相关系数分别是r=0.695 (P<0.001)和0.636(P<0.001)。土壤表层全氮和有效氮的梯度分布与土壤有机碳的分布基本一致：沿经度呈现东高西低的趋势，局部由于土壤退化而出现低谷。样带除东部山区外，其它各部分土壤有效氮都很低，成为其植被生长的限制因子之一。样带下层土壤全氮和有效氮的含量低于表层，但样带不同部位下层土壤全氮和有效氮下降的幅度不同。总的来看，土壤全氮的剖面分布和土壤有机碳相似，而土壤有效氮则有所不同。 (7).土壤全氮和有效氮是土壤生化环境中两个重要的因子。样带土壤全氮和有效氮和土壤有机碳、全磷、全硫、全锌、土壤活性碳、有效磷、有效钾、有效锰、有效锌、土壤容重、田间持水量土壤总孔度等因子均呈显著或极显著的相关关系。 (8).样带表层土壤全氮和有效氮与降雨量之间呈极显著的正相关关系，相关系数分别是0.682(P<0.001)和0.688(P<0.001)。而下层土壤全氮和有效氮与降雨量之间的没有显著的相关关系（r=0.241，P=0.256; r=0.366，P=0.079）。土壤有效氮占全氮的比例与年均温呈显著正相关关系（相关系数r=0.390，p=0.044）。 (9).短期培养试验中，CO2浓度加倍和不同土壤湿度对土壤全氮和有效氮的影响没有达到显著水平。整个试验中土壤全氮和有效氮的变异较小（变异系数分别是5.55%和3.84%），但仍能反映一定的变化趋势。 (10)．玉米残体还田能够增加土壤氮素含量，减轻因其作为燃烧材料而造成的氮素损失和对大气的污染;玉米残体施入土壤，增加了土壤微生物氮含量，提高土壤氮活性，有利于土壤氮素养分的协调供应;玉米残体还田能够促进氮素从营养器官向籽粒中转移，提高氮素养分的利用效率。同时，玉米残体还田可以降低土壤NO3--N的累 积，减少肥料氮的损失4.7～5.6%。 (ll)．根据国内外文献和我们连续10年作物残体还田的肥料长期定位试验及盆栽试验结果，从减缓CO2排放、增加土壤碳固存、提高土壤生产力入手，分析了农业生态系统作物残体还田的必要性与可行性，讨论了农田作物残体还田，增加土壤碳固存对于减缓CO2排放、提高土壤生产力的作用与意义。提倡作物残体因地制宜地归还土壤，但作物残体还田后土壤固存与减缓温室气体排放的潜力还需要进一步进行研究。

Si（111）衬底上GaN外延层的MOCVD生长与性质研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Si(111)衬底GaN生长及特性研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Si(111)上GaN的NH3-MBE生长及MSM 紫外探测器研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Si(111)衬底上GaN 外延的MOCVD 生长及其应力研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Si(111)衬底上GaN薄膜的生长及应变调控研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer

We present the growth of GaN epilayer on Si (111) substrate with a single AlGaN interlayer sandwiched between the GaN epilayer and AlN buffer layer by using the metalorganic chemical vapour deposition. The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. It is found that an AlN buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer, which can introduce a more compressive strain into the subsequent grown GaN layer, and reduce the crack density and threading dislocation density in GaN film.

Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111)

We report the growth of high quality and crack-free GaN film on Si (111) substrate using Al0.2Ga0.8N/AlN stacked interlayers. Compared with the previously used single AlN interlayer, the AlGaN/AlN stacked interlayers can more effectively reduce the tensile stress inside the GaN layer. The cross-sectional TEM image reveals the bending and annihilation of threading dislocations (TDs) in the overgrown GaN film which leads to a decrease of TD density.