Si（111）衬底上GaN外延层的MOCVD生长与性质研究
| Contribuinte(s) |
杨辉 |
|---|---|
| Data(s) |
2004
|
| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z Made available in DSpace on 2009-04-13T11:45:31Z (GMT). Made available in DSpace on 2009-07-09T01:36:00Z (GMT). No. of bitstreams: 1 disk/eh2004/wm.pdf: 1448942 bytes, checksum: f478c6201f8bf273d3a6dcfa64d88abb (MD5) Previous issue date: 2004 |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
伍墨.Si（111）衬底上GaN外延层的MOCVD生长与性质研究.[硕士].北京.中国科学院半导体研究所.2004 |
| Palavras-Chave | #微电子学与固体电子学 |
| Tipo |
学位论文 |
