Si(111)衬底GaN生长及特性研究


Autoria(s): 陆沅
Contribuinte(s)

王占国

Data(s)

2004

Resumo

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Made available in DSpace on 2009-04-13T11:45:31Z (GMT).

Made available in DSpace on 2009-07-09T01:36:04Z (GMT). No. of bitstreams: 1 disk/eh2004/luy.pdf: 1717923 bytes, checksum: b74c35680977c8b1c98b180bfa77ffa0 (MD5) Previous issue date: 2004

Identificador

http://ir.semi.ac.cn/handle/172111/5353

http://www.irgrid.ac.cn/handle/1471x/60238

Idioma(s)

中文

Fonte

陆沅.Si(111)衬底GaN生长及特性研究.[博士].北京.中国科学院半导体研究所.2004

Palavras-Chave #材料物理与化学
Tipo

学位论文