Si(111)上GaN的NH3-MBE生长及MSM 紫外探测器研究
| Contribuinte(s) |
曾一平 王晓亮 |
|---|---|
| Data(s) |
2005
|
| Resumo |
Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z Made available in DSpace on 2009-04-13T11:45:31Z (GMT). Made available in DSpace on 2009-07-09T01:36:17Z (GMT). No. of bitstreams: 1 disk/eh2005/znh.pdf: 4089725 bytes, checksum: 1428c4dd7cf5d5ccc06b6d26e705dc66 (MD5) Previous issue date: 2005 |
| Identificador | |
| Idioma(s) |
中文 |
| Fonte |
张南红.Si(111)上GaN的NH3-MBE生长及MSM 紫外探测器研究.[博士].北京.中国科学院半导体研究所.2005 |
| Palavras-Chave | #材料物理与化学 |
| Tipo |
学位论文 |
