Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer
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2010
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| Resumo |
We present the growth of GaN epilayer on Si (111) substrate with a single AlGaN interlayer sandwiched between the GaN epilayer and AlN buffer layer by using the metalorganic chemical vapour deposition. The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. It is found that an AlN buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer, which can introduce a more compressive strain into the subsequent grown GaN layer, and reduce the crack density and threading dislocation density in GaN film. Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-13T02:03:21Z No. of bitstreams: 1 Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer.pdf: 2229197 bytes, checksum: fee5c0946b77e8d4b5eff75c63fc8d3e (MD5) Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-13T02:04:53Z (GMT) No. of bitstreams: 1 Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer.pdf: 2229197 bytes, checksum: fee5c0946b77e8d4b5eff75c63fc8d3e (MD5) Made available in DSpace on 2010-04-13T02:04:53Z (GMT). No. of bitstreams: 1 Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer.pdf: 2229197 bytes, checksum: fee5c0946b77e8d4b5eff75c63fc8d3e (MD5) Previous issue date: 2010 National Natural Science Foundation of China 60506001 60476021 60576003 60776047 60836003；National Basic Research Program of China 2007CB936700；Project of Technological Research and Development of Hebei Province, China 07215134 其它 National Natural Science Foundation of China 60506001 60476021 60576003 60776047 60836003；National Basic Research Program of China 2007CB936700；Project of Technological Research and Development of Hebei Province, China 07215134 |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Wu YX (Wu Yu-Xin), Zhu JJ (Zhu Jian-Jun), Chen GF (Chen Gui-Feng), Zhang SM (Zhang Shu-Ming), Jiang DS (Jiang De-Sheng), Liu ZS (Liu Zong-Shun), Zhao DG (Zhao De-Gang), Wang H (Wang Hui), Wang YT (Wang Yu-Tian), Yang H (Yang Hui) .Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer.CHINESE PHYSICS B,2010,19(3):Art. No. 036801 |
| Palavras-Chave | #光电子学 #GaN #Si (111) substrate #metalorganic chemical vapour deposition #AlN buffer layer #AlGaN interlayer #: VAPOR-PHASE EPITAXY #CRACK-FREE GAN #STRESS-CONTROL #SI(111) #DEPOSITION #ALXGA1-XN #FILM |
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期刊论文 |
