Si(111)衬底上GaN薄膜的生长及应变调控研究


Autoria(s): 吴玉新
Contribuinte(s)

杨辉

朱建军

Data(s)

2009

Resumo

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Made available in DSpace on 2009-04-13T11:45:31Z (GMT).

Made available in DSpace on 2009-09-10T06:08:25Z (GMT). No. of bitstreams: 1 disk/eh2009/wyx.pdf: 3271620 bytes, checksum: af52f593d7d7b673a3fc29251fcfcdc5 (MD5) Previous issue date: 2009

Identificador

http://ir.semi.ac.cn/handle/172111/6200

http://www.irgrid.ac.cn/handle/1471x/60660

Idioma(s)

中文

Fonte

吴玉新.Si(111)衬底上GaN薄膜的生长及应变调控研究.[博士].北京.中国科学院半导体研究所.2009

Palavras-Chave #物理电子学
Tipo

学位论文