Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111)
| Data(s) |
2010
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| Resumo |
We report the growth of high quality and crack-free GaN film on Si (111) substrate using Al0.2Ga0.8N/AlN stacked interlayers. Compared with the previously used single AlN interlayer, the AlGaN/AlN stacked interlayers can more effectively reduce the tensile stress inside the GaN layer. The cross-sectional TEM image reveals the bending and annihilation of threading dislocations (TDs) in the overgrown GaN film which leads to a decrease of TD density. Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-22T13:54:57Z No. of bitstreams: 1 Effects of AlGaNAlN Stacked Interlayers on GaN Growth on Si (111).pdf: 435104 bytes, checksum: 2079af0298c19f45e59a649c9a97d0a1 (MD5) Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-04-22T14:12:11Z (GMT) No. of bitstreams: 1 Effects of AlGaNAlN Stacked Interlayers on GaN Growth on Si (111).pdf: 435104 bytes, checksum: 2079af0298c19f45e59a649c9a97d0a1 (MD5) Made available in DSpace on 2010-04-22T14:12:11Z (GMT). No. of bitstreams: 1 Effects of AlGaNAlN Stacked Interlayers on GaN Growth on Si (111).pdf: 435104 bytes, checksum: 2079af0298c19f45e59a649c9a97d0a1 (MD5) Previous issue date: 2010 国际 |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Wang H (Wang Hui), Liang H (Liang Hu), Wang Y (Wang Yong), Ng KW (Ng Kar-Wei), Deng DM (Deng Dong-Mei), Lau KM (Lau Kei-May) .Effects of AlGaN/AlN Stacked Interlayers on GaN Growth on Si (111).CHINESE PHYSICS LETTERS,2010,27(3):Art. No. 038103 |
| Palavras-Chave | #光电子学 #VAPOR-PHASE EPITAXY #TEMPERATURE ALN INTERLAYERS #CRACK-FREE GAN #STRESS-CONTROL #SI(111) #DEPOSITION #REDUCTION #THICKNESS #NITRIDE #LAYERS |
| Tipo |
期刊论文 |
