聚β－羟基丁酸酯的化学修饰及其特性

针对聚β一经基丁酸酷(PHB)加工窗口窄、脆性严重等不足，本论文采用在PHB分子链上接枝极性小分子顺丁烯二酸醉（MA）和将PHB与聚8一已内醋（PCL）进行醋交换的方法对其分子链进行化学修饰，试图通过PHB的分子结构变化改变其聚集态结构，从而使PHB在性能上有较大幅度的提高。获得的主要研究结果如下：1．本工作采用自由基引发聚合方法研究了PHB与MA的接枝反应。讨论了各种反应条件，如溶剂种类、单体浓度、引发剂浓度、反应时间和温度等对接枝反应的影响，确定了PHB接枝MA的最佳反应条件。采用对酸配基团进行化学滴定和~(13)C NMR方法对接枝产物的接枝率和结构进行了表征。结果表明，M八接枝到PHB的叔碳原子上，接枝率可以控制在0.2∽0.85%的范围内。2.采用DSC、WARD、POM和TGA等方法对PHB及其接枝顺丁烯二酸配共聚物（PHB-g-MA）的结晶行为、·热稳定性和生物降解特性进行了研究。结果表明：接枝产物的热稳定性明显优于PHB，热分解温度随接枝率不同提高了20-40℃。接枝后，MA基团阻碍了PHB的结晶，降低了PHB的结晶能力，使得PHB的结晶行为发生很大的变化。结晶温度降低，冷结晶温度升高，结晶焙略有下降。与PHB相比，PHB-g-MA的球晶环带结构变得清晰规整，随着接枝率的提高，球晶的环带宽度逐渐增加。在 DSC升温过程中PHB-g-MA发生重结晶，产生熔融双峰现象。但是WAXD的实验结果表明，PHB接枝MA并没有改变它的结晶结构。J . PHB接枝MA后，PHB的力学性能保持不变，并且MA基团能够促进PHB的生物降解和改善PHB的溶解性。4.采用FTIR和‘~1H NMR研究了PHB-g-MA的热分解机理。结果表明，PHB-g-MA的热分解机理与PHB相同：在高温条件下，PHB分子链的醋基部分形成六元环结构，断链时夺取亚甲基氢，生成竣基和双键两种端基。5．采用TGA方法选择不同的升温速率研究了PHB和不同接枝率的PHB-g-MA的热分解行为。PHB-g-MA的热分解温度随着接枝率的增加逐渐增加，然后逐渐下降。接枝率为0.56%时，PHB-g-MA的热分解温度最高，达到256.6℃。由Flynn-Wall-Ozawa方法得到的PHB的热分解活化能随着热失重率的增加而逐渐下降；而PHB-g-MA的热分解活化能随着接枝率和热失重率的不同，表现出不同的规律。接枝率为0.56%时，它的热分解活化能达到最大，为116.51kJ/mol．采用DSC方法对PHB和PHB-g-MA的等温结晶动力学和熔融行为进行了研究。用Avrarnl方程分析的结果表明，MA的引入使得PHB的结晶能力下降，但是并没有改变它的结晶成核机理和生长方式。随着接枝率的增加，结晶活化能增加。等温结晶后的PHB-g-MA表现出双熔融行为，这是在升温过程中发生熔融重结晶的结果。这种熔融行为不仅与样品的接枝率有关，而且也会受到结晶温度的影响7．在不同的冷却速率下用DSC方法研究了PHB和PHB-g-MA的非等温结晶动力学和熔融行为。结果表明，PHB和PHB-g-MA在非等温结晶过程中的结晶行为与冷却速率和接枝率密切相关。用Jeziorny方法改进的Avrami方程分析了PHB和PHB-g-MA的非等温结晶行为。当冷却速率较低时，PHB-9-MA的结晶机理与PHB不同。非等温结晶后的PHB-g-MA的熔融行为表现出熔融双峰，这是在升温过程中发生熔融重结晶的结果。8．用DSC方法研究了甲壳胺（CS）的热行为，测得CS的玻璃化转变温度（Tg）为80.4'C。考察了不同组成的PHB/CS和PHB-g-MA/CS共混体系的热行为。在PHB/CS=20/80, 40/60的共混体系中有单一的Tg出现；而 PHB-g-MA/CS=20/80, 40/60, 60/40的共混体系中也有单一的Tgo随着共混体系中PHB含量的减少，T_g逐渐增加，表明这些共混体系具有相容性。在共混体系中，随着CS含量的增加，PHB和PHB-g-MA组分的熔点和熔融烩显著降低。与对PHB相比，CS对PHB-g-MA熔点和熔融焙的抑止作用更大。9．通过FTIR, WAXD和XP S研究了相容共混体系中PHB, PHB-g-MA与CS组．分间的特殊相互作用。FTIR结果表明两组．分间形成较弱的氢键。这种氢键作用比CS自身分子内的氢键作用小，以至于很难“破坏”CS自身的聚集态结构，但是它可以“扰乱”PHB, PHB-g-MA和CS原有的结晶形貌。这一结果被WAXD进一步证实。XPS的结果清楚地表明分子间氢键作用是通过CS中的-NH_2与PHB-g-MA的C＝O产生的。在PHB分子链中接枝MA基团，可以增强这种相互作用，使PHB-g-MAICS-共混体系的Nls和C1s结合能和谱型发生明显改变。10．用熔融法和溶液法将PHB和PCL进行醋交换反应，制备PHB和PCL的共聚醋(PHB-co-PCL).讨论了各种反应条件，如组分、反应时间和温度、催化剂种类和用量等对醋交换反应的影响。采用~(13)C NMR和FTIR方法对醋交换产物的结构进行了表征。结果表明，提高反应温度和延长反应时间有利于酷交换反应的发生。调整反应条件，共聚酷中PCL的含量可以控制在0.95-4.81%的范围内。在本实验条件下，制备的PHB-co-PCL均为嵌段共聚物。11．采用DSC、WARD、POM和TGA等方法对PHB-co-PCL的热行为、晶体结构和热稳定性进行了研究。随着酷交换量的增加，PHB-co-PCL的结晶行为发生很大的变化。冷结晶温度、结晶一温度和熔点均降低。并且 PHB-co-PCL在升温过程中表现出熔融双峰，这是共聚酷在结晶过程中结晶不完善导致在升温过程中发生熔融重结晶的结果，。PCL链段的引入并没有改变PHB的晶体结构，却使得共聚酷的结晶规整性下降。而且PHB-co-PCL的热稳定性基本保持不变。

NEW FORMATION MECHANISM OF ELECTRIC-FIELD DOMAIN DUE TO GAMMA-X SEQUENTIAL TUNNELING IN GAAS/ALAS SUPERLATTICES

We have studied the sequential tunneling of doped weakly coupled GaAs/ALAs superlattices (SLs), whose ground state of the X valley in AlAS layers is designed to be located between the ground state (E(GAMMA1)) and the first excited state (E(GAMMA2)) of the GAMMA valley in GaAs wells. The experimental results demonstrate that the high electric field domain in these SLs is attributed to the GAMMA-X sequential tunneling instead of the usual sequential resonant tunneling between subbands in adjacent wells. Within this kind of high field domain, electrons from the ground state in the GaAs well tunnel to the ground state of the X valley in the nearest AlAs layer, then through very rapid real-space transfer relax from the X valley in the AlAs layer to the ground state of the GAMMA valley of the next GaAs well.

GIANT CAPACITANCE OSCILLATIONS RELATED TO THE QUANTUM CAPACITANCE IN GAAS ALAS SUPERLATTICES

We have observed periodic current and capacitance oscillations with increasing bias on doped GaAs/AlAs superlattices at a temperature of 77 K. The maximum of the observed capacitance is larger than usual geometric capacitances in superlattices, being comparable to the quantum capacitance of the two-dimensional (2D) electron system proposed by Luryi. A model based on well-to-well sequential resonant tunneling due to the movement of the boundary between the electric field domains in superlattice was proposed to explain the origin of the giant capacitance oscillations. It was demonstrated that the capacitance at the peaks of capacitance-voltage (C-V) characteristics reflects the quantum capacitance of the space-charge region at the boundary between the domains (a novel 2D electron system).

PHOTOELECTROCHEMICAL BEHAVIOR OF THE GAAS/ALXGA1-XAS SUPERLATTICE ELECTRODE/ELECTROLYTE INTERFACE

Single and multiple quantum wells of lattice-matched superlattices material GaAs/AlxGa1-xAs have been studied as photoelectrodes in photoelectrochemical cells containing nonaqueous electrolyte. Structural photocurrent spectra in the potential range of -1.8 to 1.0 V (vs standard calomel electrode) were obtained. The quantum yields for both superlattice electrodes were estimated and compared.

INVESTIGATION OF THE GROWN DIAMOND (100) SURFACE USING HIGH-RESOLUTION ELECTRON-ENERGY LOSS SPECTROSCOPY

The diamond (100) facets deposited at initial 1.0% CH4 have been investigated using high resolution electron energy loss spectroscopy (HREELS). The diamond (100) facets grown at 800-degrees-C are terminated by CH2 radicals, and there is no detectable frequency shift compared with the characteristic frequencies of molecular subgroup CH2. Beside the CH2 vibration loss, CH bend loss (at 140 meV) of locally monohydrogenated dimer is detected for the diamond (100) facets grown at 1000-degrees-C. Dosing the (100) facets grown at 800-degrees-C with atomic hydrogen at 1*10(-6) mbar, the loss peak at 140 meV appears. It is suggested that there are enough separately vacant sites and uniformly dispersed monohydrogenated dimers on (100) facets. This structure relaxes the steric repulsion between the adjacent hydrogen atoms during the diamond (100) surface growth.

HIGH-RESOLUTION DLTS AND ITS APPLICATION TO LATTICE-MISMATCH-INDUCED DEEP LEVELS IN INGAP

A new method of differentiating the deep level transient spectroscopy (DLTS) signal is used to increase the resolution of conventional DLTS. Using this method, more than one single deep level with small differences in activation energy or capture cross section, which are often hard to determine by conventional DLTS, can be distinguished. A series of lattice-mismatched InxGa1-xP samples are measured by improved DLTS to determine accurately the activation energy of a lattice-mismatch-induced deep level. This level cannot be clearly determined using conventional DLTS because the two signals partly overlap each other. Both the signals are thought to originate from a phosophorus vacancy and lattice-mismatch-induced defect.

Perpendicular-electric-field dependence of exciton binding energy studied by continuous-wave photoluminescence

The reduction of exciton binding energy induced by a perpendicular electric field in a stepped quantum well is studied. From continuous-wave photoluminescence spectra at 77 K we have observed an obvious blueshift of the exciton peak due to a spatially direct-to-indirect transition of excitons. A simple method is used to calculate the exciton binding energy while the inhomogeneous broadening is taken into account in a simple manner. The calculated result reproduces remarkably well the experimental observation.

New aspects of K promoted nitridation of the InP(100) surface

The effect of molecular nitrogen exposure on the InP(100) surface modified by the alkali metal K overlayer is investigated by core-level photoemission spectroscopy using synchrotron radiation. The alkali metal covered surface exhibits reasonable nitrogen uptake at room temperature, and results in the formation of a P3N5 nitride complex. Flash annealing at 400 degrees C greatly enhanced the formation of this kind of nitride complex. Above 500 degrees C, the nitride complex dissolved completely. (C) 1997 American Vacuum Society.

Photoluminescence studies on the interaction of near-surface GaAs/AlxGa1-xAs quantum wells with chemical adsorbates

The chemical adsorption of sodium sulphide, ferrocene, hydroquinone and p-methyl-nitrobenzene onto the surface of a GaAs/AlxGa1-xAs multiquantum well semiconductor was characterized by steady state and time-resolved photoluminescence (PL) spectroscopy. The changes in the PL response, including the red shift of the emission peak of the exciton in the quantum well and the enhancement of the PL intensity, are discussed in terms of the interactions of the adsorbed molecules with surface states.

Subband separation energy dependence of intersubband relaxation time in wide quantum wells

Subband separation energy dependence of intersubband relaxation time in a wide quantum well (250 Angstrom) was studied by steady-state and time-resolved photoluminescence. By applying a perpendicular electrical field, the subband separation energy in the quantum well is continuously tuned from 21 to 40 meV. As a result, it is found that the intersubband relaxation time undergoes a drastic change from several hundred picoseconds to subpicoseconds. It is also found that the intersubband relaxation has already become very fast before the energy separation really reaches one optical phonon energy. (C) 1997 American Institute of Physics.

Photoluminescence investigation of charge build-up process in the emitter of a double-barrier resonant tunneling structure

Charge build-up process in the emitter of a double-barrier resonant tunneling structure is studied by using photoluminescence spectroscopy. Clear evidence is obtained that the charge accumulation in the emitter keeps almost constant with bias voltages in the resonant regime, while it increases remarkably with bias voltages beyond resonant regime. The optical results are in good agreement with the electrical measurement. It is demonstrated that the band gap renormalization plays a certain rob in the experiment.

Carrier relaxation and thermal activation of localized excitons in self-organized InAs multilayers grown on GaAs substrates

We have investigated the temperature dependence of photoluminescence (PL) properties of a number of self-organized InAs/GaAs heterostructures with InAs layer thickness ranging from 0.5 to 3 ML. The temperature dependence of InAs exciton emission and linewidth was found to display a significant difference when the InAs layer thickness is smaller or larger than the critical thickness around 1.7 ML. The fast redshift of PL energy and an anomalous decrease of linewidth with increasing temperature were observed and attributed to the efficient relaxation process of carriers in multilayer samples, resulting from the spread and penetration of the carrier wave functions in coupled InAs quantum dots. The measured thermal activation energies of different samples demonstrated that the InAs wetting layer may act as a barrier for the thermionic emission of carriers in high-quality InAs multilayers, while in InAs monolayers and submonolayers the carriers are required to overcome the GaAs barrier to escape thermally from the localized states.

Optical properties of delta-doped GaAs and GaAs/Al0.1Ga0.9As superlattices

Radiative transition in delta-doped GaAs superlattices with and without Al0.1Ga0.9As barriers is investigated by using photoluminescence at low temperatures. The experimental results show that the transition mechanism of delta-doped superlattices is very different from that of ordinary superlattices. Emission intensity of the transition from the electron first excited state to hole states is obviously stronger than that from the electron ground state to hole states due to larger overlap integral between wavefunctions of electrons in the first excited state and hole states. Based on the effective mass theory we have calculated the self-consistent potentials, optical transition matrix elements and photoluminescence spectra for two different samples. By using this model we can explain the main optical characteristics measured. Moreover, after taking into account the bandgap renormalization energy, good agreement between experiment and theory is obtained.