New aspects of K promoted nitridation of the InP(100) surface
Data(s) |
1997
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Resumo |
The effect of molecular nitrogen exposure on the InP(100) surface modified by the alkali metal K overlayer is investigated by core-level photoemission spectroscopy using synchrotron radiation. The alkali metal covered surface exhibits reasonable nitrogen uptake at room temperature, and results in the formation of a P3N5 nitride complex. Flash annealing at 400 degrees C greatly enhanced the formation of this kind of nitride complex. Above 500 degrees C, the nitride complex dissolved completely. (C) 1997 American Vacuum Society. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Huang L; Zhao TX; Duan YW; Wang XP; Lu ED; Xu PS; Hsu CC .New aspects of K promoted nitridation of the InP(100) surface ,JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,1997,15(2):374-376 |
Palavras-Chave | #半导体材料 #ALKALI-METAL |
Tipo |
期刊论文 |