New aspects of K promoted nitridation of the InP(100) surface


Autoria(s): Huang L; Zhao TX; Duan YW; Wang XP; Lu ED; Xu PS; Hsu CC
Data(s)

1997

Resumo

The effect of molecular nitrogen exposure on the InP(100) surface modified by the alkali metal K overlayer is investigated by core-level photoemission spectroscopy using synchrotron radiation. The alkali metal covered surface exhibits reasonable nitrogen uptake at room temperature, and results in the formation of a P3N5 nitride complex. Flash annealing at 400 degrees C greatly enhanced the formation of this kind of nitride complex. Above 500 degrees C, the nitride complex dissolved completely. (C) 1997 American Vacuum Society.

Identificador

http://ir.semi.ac.cn/handle/172111/15257

http://www.irgrid.ac.cn/handle/1471x/101523

Idioma(s)

英语

Fonte

Huang L; Zhao TX; Duan YW; Wang XP; Lu ED; Xu PS; Hsu CC .New aspects of K promoted nitridation of the InP(100) surface ,JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,1997,15(2):374-376

Palavras-Chave #半导体材料 #ALKALI-METAL
Tipo

期刊论文