PHOTOELECTROCHEMICAL BEHAVIOR OF THE GAAS/ALXGA1-XAS SUPERLATTICE ELECTRODE/ELECTROLYTE INTERFACE
| Data(s) |
1994
|
|---|---|
| Resumo |
Single and multiple quantum wells of lattice-matched superlattices material GaAs/AlxGa1-xAs have been studied as photoelectrodes in photoelectrochemical cells containing nonaqueous electrolyte. Structural photocurrent spectra in the potential range of -1.8 to 1.0 V (vs standard calomel electrode) were obtained. The quantum yields for both superlattice electrodes were estimated and compared. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
LIU Y; XIAO XR; LI XP; REN XM; ZHENG HQ; ZENG YP; YAN CH; SUN DZ.PHOTOELECTROCHEMICAL BEHAVIOR OF THE GAAS/ALXGA1-XAS SUPERLATTICE ELECTRODE/ELECTROLYTE INTERFACE,CHINESE PHYSICS LETTERS,1994,11(4):239-241 |
| Palavras-Chave | #半导体材料 #PHOTOCURRENT SPECTROSCOPY |
| Tipo |
期刊论文 |
