HIGH-RESOLUTION DLTS AND ITS APPLICATION TO LATTICE-MISMATCH-INDUCED DEEP LEVELS IN INGAP
Data(s) |
1992
|
---|---|
Resumo |
A new method of differentiating the deep level transient spectroscopy (DLTS) signal is used to increase the resolution of conventional DLTS. Using this method, more than one single deep level with small differences in activation energy or capture cross section, which are often hard to determine by conventional DLTS, can be distinguished. A series of lattice-mismatched InxGa1-xP samples are measured by improved DLTS to determine accurately the activation energy of a lattice-mismatch-induced deep level. This level cannot be clearly determined using conventional DLTS because the two signals partly overlap each other. Both the signals are thought to originate from a phosophorus vacancy and lattice-mismatch-induced defect. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
ZHU QS; AKASAKI I.HIGH-RESOLUTION DLTS AND ITS APPLICATION TO LATTICE-MISMATCH-INDUCED DEEP LEVELS IN INGAP,SEMICONDUCTOR SCIENCE AND TECHNOLOGY,1992,7(12):1441-1445 |
Palavras-Chave | #半导体物理 #TRANSIENT SPECTROSCOPY #SEMICONDUCTORS |
Tipo |
期刊论文 |