Photoluminescence studies on the interaction of near-surface GaAs/AlxGa1-xAs quantum wells with chemical adsorbates
Data(s) |
1996
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Resumo |
The chemical adsorption of sodium sulphide, ferrocene, hydroquinone and p-methyl-nitrobenzene onto the surface of a GaAs/AlxGa1-xAs multiquantum well semiconductor was characterized by steady state and time-resolved photoluminescence (PL) spectroscopy. The changes in the PL response, including the red shift of the emission peak of the exciton in the quantum well and the enhancement of the PL intensity, are discussed in terms of the interactions of the adsorbed molecules with surface states. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Liu Y; Xiao XR; Li XP; Xu ZY; Yuan ZL; Zeng YP; Yang CH; Sun DZ .Photoluminescence studies on the interaction of near-surface GaAs/AlxGa1-xAs quantum wells with chemical adsorbates ,JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY,1996,101(0):113-117 |
Palavras-Chave | #半导体材料 #chemical adsorption #multiquantum well #photoluminescence #POROUS SILICON #GAAS #HETEROSTRUCTURES #PASSIVATION #ABSORPTION #ENERGY #CELL |
Tipo |
期刊论文 |