Photoluminescence studies on the interaction of near-surface GaAs/AlxGa1-xAs quantum wells with chemical adsorbates


Autoria(s): Liu Y; Xiao XR; Li XP; Xu ZY; Yuan ZL; Zeng YP; Yang CH; Sun DZ
Data(s)

1996

Resumo

The chemical adsorption of sodium sulphide, ferrocene, hydroquinone and p-methyl-nitrobenzene onto the surface of a GaAs/AlxGa1-xAs multiquantum well semiconductor was characterized by steady state and time-resolved photoluminescence (PL) spectroscopy. The changes in the PL response, including the red shift of the emission peak of the exciton in the quantum well and the enhancement of the PL intensity, are discussed in terms of the interactions of the adsorbed molecules with surface states.

Identificador

http://ir.semi.ac.cn/handle/172111/15259

http://www.irgrid.ac.cn/handle/1471x/101524

Idioma(s)

英语

Fonte

Liu Y; Xiao XR; Li XP; Xu ZY; Yuan ZL; Zeng YP; Yang CH; Sun DZ .Photoluminescence studies on the interaction of near-surface GaAs/AlxGa1-xAs quantum wells with chemical adsorbates ,JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY,1996,101(0):113-117

Palavras-Chave #半导体材料 #chemical adsorption #multiquantum well #photoluminescence #POROUS SILICON #GAAS #HETEROSTRUCTURES #PASSIVATION #ABSORPTION #ENERGY #CELL
Tipo

期刊论文