GIANT CAPACITANCE OSCILLATIONS RELATED TO THE QUANTUM CAPACITANCE IN GAAS ALAS SUPERLATTICES


Autoria(s): ZHANG YH; LI YX; JIANG DH; YANG XP; ZHANG PH
Data(s)

1994

Resumo

We have observed periodic current and capacitance oscillations with increasing bias on doped GaAs/AlAs superlattices at a temperature of 77 K. The maximum of the observed capacitance is larger than usual geometric capacitances in superlattices, being comparable to the quantum capacitance of the two-dimensional (2D) electron system proposed by Luryi. A model based on well-to-well sequential resonant tunneling due to the movement of the boundary between the electric field domains in superlattice was proposed to explain the origin of the giant capacitance oscillations. It was demonstrated that the capacitance at the peaks of capacitance-voltage (C-V) characteristics reflects the quantum capacitance of the space-charge region at the boundary between the domains (a novel 2D electron system).

Identificador

http://ir.semi.ac.cn/handle/172111/14001

http://www.irgrid.ac.cn/handle/1471x/101035

Idioma(s)

英语

Fonte

ZHANG YH; LI YX; JIANG DH; YANG XP; ZHANG PH.GIANT CAPACITANCE OSCILLATIONS RELATED TO THE QUANTUM CAPACITANCE IN GAAS ALAS SUPERLATTICES,APPLIED PHYSICS LETTERS,1994,64(25):3416-3418

Palavras-Chave #半导体材料 #ELECTRIC-FIELD DOMAINS #TUNNELING STRUCTURES #SYSTEMS
Tipo

期刊论文