MBE生长轻掺Si高迁移率GaAs材料的杂质补偿特性研究

报道了用MBE生长轻掺Si高迁移率GaAs材料的杂质补偿特性实验研究。已得到77K温度下迁移率为16.2×10~4cm~2/(V·s)的GaAs材料。样品的Hall测量结果表明:在较低的杂质浓度范围(1×10~(13)cm~(-3)＜n＜1×10~(15)cm~(-3))内,在大体相同的生长温度(590℃左右)下,选择适当的生长速率Gr会增强对浅受主杂质的抑制作用,同时也会一致Si的自补偿效应,减小杂质的补偿度N_a/N_d之值,从而提高MBE外延GaAs材料的迁移率。

高质量GaAs-AlGaAs材料MBE生长研究及其应用

通过对分子束外延(MBE)中影响GaAs、AlGaAs材料生长的一些关键因素的分析、实验与研究,得到了具有很好晶格完整性和高质量电学、光学特性的GaAs、AlGaAs单晶材料,实现了75mm大面积范围内的厚度、组分和掺杂等的很好均匀性.研制了高质量的GaAs/AlGaAs量子阱超晶格材料,并应用于量子阱激光器材料的研制,获得了具有极低阈值电流密底、低内损耗、高量子效率的高质量量子阱激光器外延材料.

MBE生长的PM-HEMT结构中深电子陷阱及其钝化/消除

于2010-11-23批量导入

用MBE在非平面衬底上生长的掩埋脊形多量子线列阵

国家自然科学基金

MBE GaAs/GaP（001）异质外延层结构参数的X射线双晶衍射研究

于2010-11-23批量导入

MBE生长的GaAs1—xSbx／GaAs系中缺陷的研究

于2010-11-23批量导入

MBE[（GaAs）l（Ga（1-x）AlxAs）m]n/GaAs（001）一维超晶格的X射线双晶...

于2010-11-23批量导入

High-mobility Ga-polarity GaN achieved by NH3-MBE

GaN epilayers were grown on (0001) sapphire substrates by NH3-MBE and RF-MBE (radio frequency plasma). The polarities of the epilayers were investigated by in-situ RHEED, chemical solution etching and AFM surface examination. By using a RF-MBE grown GaN layer as template to deposit GaN epilayer by NH3-MBE method, we found that not only Ga-polarity GaN films were repeatedly obtained, but also the electron mobility of these Ga-polarity films was significantly improved with a best value of 290 cm(2)/V.s at room temperature. Experimental results show it is an easy and stable way for growth of high quality Ga-polarity GaN films.