A pll based frequency synthesizer in 0.13 um sige bicmos for mb-ofdm uwb systems

With the growing demand for high-speed and high-quality short-range communication, multi-band orthogonal frequency division multiplexing ultra-wide band (MB-OFDM UWB) systems have recently garnered considerable interest in industry and in academia. To achieve a low-cost solution, highly integrated transceivers with small die area and minimum power consumption are required. The key building block of the transceiver is the frequency synthesizer. A frequency synthesizer comprised of two PLLs and one multiplexer is presented in this thesis. Ring oscillators are adopted for PLL implementation in order to drastically reduce the die area of the frequency synthesizer. The poor spectral purity appearing in the frequency synthesizers involving mixers is greatly improved in this design. Based on the specifications derived from application standards, a design methodology is presented to obtain the parameters of building blocks. As well, the simulation results are provided to verify the performance of proposed design.

SiGe HBTs on Bonded SOI Incorporating Buried Silicide Layers

The performance of silicon bipolar transistors has been significantly improved by the use of ultra narrow base layers of SiGe. To further improve device performance by minimising parasitic resistance and capacitance the authors produced an unique silicon-on-insulator (SOI) substrate incorporating a buried tungsten disilicide layer. This structure forms the basis of a recent submission by Zarlink Semiconductors ( Silvaco, DeMontfort & Queen�s) to DTI for high voltage devices for automotive applications. The Queen�s part of the original EPSRC project was rated as tending to outstanding.

A 60 GHz wide tuning range SiGe bipolar VCO for HDMI and wireless docking applications

A wide tuning range voltage controlled oscillator (VCO) with novel architecture is proposed in this work. The entire circuit consists of a VCO core, a summing circuit, a single-ended to differential (STD) converter and a buffer amplifier. The VCO core oscillates at half the desired frequency and the second harmonic of the VCO core is extracted by the summing circuit, which is then converted to a differential pair by the STD. The entire VCO circuit operates from 58.85 to 70.85 GHz with 20% frequency tuning range. The measured VCO gain is less than 1.6 GHz/V. The measured phase noise at 3 MHz offset is less than -78 dBc/Hz across the entire tuning range. The differential phase error of the output signals is measured by down converting the VCO output signals to low gigahertz frequency using an on-chip mixer. The measured differential phase error is less than 8°. The VCO circuit, which is constructed using 0.35 µm SiGe technology, occupies 770 × 550 µm2 die area and consumes 62 mA under 3.5 V supply.

A 76-84 GHz SiGe power amplifier array employing low-loss four-way differential combining transformer

This paper presents holistic design of a novel four-way differential power-combining transformer for use in millimeter-wave power-amplifier (PA). The combiner with an inner radius of 25 µm exhibits a record low insertion loss of 1.25 dB at 83.5 GHz. It is designed to simultaneously act as a balanced-to-unbalanced converter, removing the need for additional BALUNs typically required in differential circuits. A complete circuit comprised of a power splitter, two-stage differential cascode PA array, a power combiner as well as input and output matching elements was designed and realized in SiGe technology with f/f 170/250 GHz. Measured small-signal gain of at least 16.8 dB was obtained from 76.4 to 85.3 GHz with a peak 19.5 dB at 83 GHz. The prototype delivered 12.5 dBm output referred 1 dB compression point and 14 dBm saturated output power when operated from a 3.2 V dc supply voltage at 78 GHz.

Ultrafast low-loss 42-70 GHz differential SPDT switch in 0.35 μm SiGe technology

This paper presents an ultrafast wideband low-loss single-pole double-throw (SPDT) differential switch in 0.35 µ m SiGe bipolar technology. The proposed topology adopting current-steering technique results in a total measured switching time of 75 ps , which suggests a maximum switching rate of 13 Gb/s, the fastest ever reported at V-band. In addition, the switch exhibits an insertion loss lower than 1.25 dB and an isolation higher than 18 dB from 42 GHz to 70 GHz. © 2006 IEEE.