Internal photoemission study on charge trapping behaviour in rapid thermal oxides on strained-Si/SiGe heterolayers

Autoria(s): Armstrong, Mervyn; Gamble, Harold; Bera, M.K.; Mahata, C.; Bhattacharya, S.; Chakraborty, A.K.; Maiti, C.K.
Data(s)

01/09/2008
Identificador

http://pure.qub.ac.uk/portal/en/publications/internal-photoemission-study-on-charge-trapping-behaviour-in-rapid-thermal-oxides-on-strainedsisige-heterolayers(e98740e4-b0f8-4964-9921-2fda41015f9e).html
Idioma(s)

eng
Direitos

info:eu-repo/semantics/restrictedAccess
Fonte

Armstrong , M , Gamble , H , Bera , M K , Mahata , C , Bhattacharya , S , Chakraborty , A K & Maiti , C K 2008 , ' Internal photoemission study on charge trapping behaviour in rapid thermal oxides on strained-Si/SiGe heterolayers ' Applied Surface Science , vol 255 , pp. 2971-2977 .
Tipo

article
Acesso ao item digital