966 resultados para Single-crystal semiconductors


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由于与GaN晶格失配小(约1.4%),γ-LiAlO2单晶有望成为一种很有希望的GaN外延衬底材料。本文使用提拉法生长出了尺寸达Ф5×50mm^3的γ-LiAlO2单晶。对该晶体毛坯的各个有代表性的位置作了X射线粉末衍射(XRPD)分析,结果表明仅仅在晶体毛坯的底部生成了一种缺锂相(LiAl5O8)。γ-LiAlO2晶体化学稳定性差,在室温时轻微水解。当在空气中于1100℃退火70h,γ-LiAlO2晶体挥发出锂组分,在表面产生缺锂相(LiAl5O8)。值得注意的是,在γ-LiAlO2晶体的红外光谱区不存

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本文描述使用温梯法(TGT)生长(1-↑102)方向的白宝石单晶,应用X射线双晶摇摆曲线(XRC)测定了晶体内部的完整性,再利用KOH熔体腐蚀出样品的r面(1-↑102)上的位错蚀坑,借助扫描电子显微镜(SEM)进行观察,发现r面白宝石的位错腐蚀坑呈等腰三角形,并且有台阶状结构,并分析了位错的成因。

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本文对β-Ga2O3单晶体的研究情况进行了综合,主要介绍了β-Ga2O3单晶体的生长方法:Verneuil法、提拉法和浮区法生长技术,并简单介绍了β-Ga2O3单晶体的光学和电学性质及其在GaN衬底方面的应用。β-Ga2O3单晶体的优异性质使其可以成为新一代的透明导电材料。

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应用中频感应提拉法生长出掺杂浓度为10 at.-%的Yb:YAG与Yb:YAP晶体,对比了室温下两种晶体的吸收和发射光谱特性。结果表明,Yb:YAG晶体比Yb:YAP晶体有更好的激光性能和低的阈值;同时对比发现,Yb:YAP晶体的吸收截面是Yb:YAG晶体的2.16倍,它容易实现LD泵;由于Yb:YAP晶体的各向异性,它有轴向效应明显,它可以产生偏振激光。

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为了将β-Ga2O3单晶应用于作为外延生长优质GaN薄膜的衬底材料,本文对β-Ga2O3 (100)进行了氮化处理,并且主要讨论了氮化温度以及β-Ga2O3表面的粗糙程度对GaN形成的影响。我们发现,最理想的氮化温度在900oC。此时,在抛光的β-Ga2O3的表面上生成了一层具有六方结构并且有择优取向的GaN层。本文同时也对氮化的机理进行了讨论。

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The growth and fabrication of GaN/InGaN multiple quantum well (MQW) light emitting diodes ( LEDs) on ( 100) beta-Ga2O3 single crystal substrates by metal-organic chemical vapour deposition (MOCVD) technique are reported. x-ray diffraction (XRD) theta-2 theta. scan spectroscopy is carried out on the GaN buffer layer grown on a ( 100) beta-Ga2O3 substrate. The spectrum presents several sharp peaks corresponding to the ( 100) beta-Ga2O3 and ( 004) GaN. High-quality ( 0002) GaN material is obtained. The emission characteristics of the GaN/InGaN MQW LED are measurement. The first green LED on beta-Ga2O3 with vertical current injection is demonstrated.

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采用中频感应提拉法生长了高质量的Tm:Y2SiO5(Tm:YSO)晶体,测定了晶体的晶格常数和分凝系数.运用劳厄照相法确定了单斜晶系Tm:YSO晶体的三个偏振轴〈010〉,D1和D2,在室温下测量了三个偏振轴方向的吸收光谱、荧光光谱和荧光寿命,计算了晶体吸收峰的吸收线宽和吸收截面.研究发现,相对于其他两个偏振轴方向,D1方向在790 nm处出现较强的吸收峰,同时在2μm附近出现了一定强度的发射峰,D1方向的吸收截面较大,荧光寿命较长.Tm:YSO晶体适用于AlGaAs二极管抽运固体激光器,在2μm波段固体激光器的应用上将有很大的发展潜力.

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New Ru(II) arene complexes of formula [((6)-p-cym)Ru(N-N)(X)](2+) (where p-cym = para-cymene, N-N = 2,2'-bipyrimidine (bpm) or 2,2'-bipyridine (bpy) and X = m/p-COOMe-Py, 1-4) were synthesised and characterized, including the molecular structure of complexes [((6)-p-cym)Ru(bpy)(m-COOMe-Py)](2+) (3) and [((6)-p-cym)Ru(bpy)(p-COOMe-Py)](2+) (4) by single-crystal X-ray diffraction. Complexes 1-4 are stable in the dark in aqueous solution over 48 h and photolysis studies indicate that they can photodissociate the monodentate m/p-COOMe-Py ligands selectively with yields lower than 1%. DFT and TD-DFT calculations (B3LYP/LanL2DZ/6-31G**) performed on singlet and triplet states pinpoint a low-energy triplet state as the reactive state responsible for the selective dissociation of the monodentate pyridyl ligands.

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The promising theoretical properties of diamond, together with the recent advances in producing high-quality single crystal diamond substrates, have increased the interest in using diamond in power electronic devices. This paper presents numerical and experimental off-state results for a diamond Schottky barrier diode (SBD), one of most studied unipolar devices in diamond. Finding a suitable termination structure is an essential step towards designing a high voltage diamond device. The ramp oxide structure shows very encouraging electronic performance when used to terminate diamond SBDs. High-k dielectrics are also considered in order to further improve the reliability and electrical performance of the structure. © 2007 Elsevier B.V. All rights reserved.

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Understanding the energy dissipation mechanisms in single-crystal silicon MEMS/NEMS resonators are particularly important to maximizing an important figure of merit relevant for miniature sensor and signal processing applications: the Quality factor (Q) of resonance. This paper discusses thermoelastic dissipation (TED) as the dominant internal-friction mechanism in flexural mode MEMS/NEMS resonators. Criteria for optimizing the geometrical design of flexural mode MEMS/NEMS resonators are theoretically established with a view towards minimizing the TED for single-crystal silicon MEMS/NEMS flexural mode resonators.

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Seeded zone-melt recrystallization using a dual electron beam system has been performed on silicon-on-insulator material, which was prepared with single-crystal silicon filling of the seed windows by selective epitaxial growth. The crystal quality has been assessed by a variety of microscopic techniques, and it is shown that single-crystal films 0.5-1.0 μm thick over 1.0 μm of isolating oxide may be prepared by this method. These films have considerably less lateral variation in thickness than standard material, in which the windows are not so filled. The filling method is suitable for both single- and multiple-layer silicon-on-insulator, and gives the advantages of excellent layer uniformity after recrystallization and improved planarity of the whole chip structure. Experiments using various amounts of seed window filling have shown that the lateral variations of silicon film thickness seen in unplanarized material are due to stress relief in the cap oxide when the silicon film is molten, rather than the effect previously postulated in which they were assumed to be due to the contraction of silicon on melting.

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For more than 20 years researchers have been interested in developing micro-gas sensors based on silicon technology. Most of the reported devices are based on micro-hotplates, however they use materials that are not CMOS compatible, and therefore are not suitable for large volume manufacturing. Furthermore, they do not allow the circuitry to be integrated on to the chip. CMOS compatible devices have been previously reported. However, these use polysilicon as the heater material, which has long term stability problems at high temperatures. Here we present low power, low cost SOI CMOS NO2 sensors, based on high stability single crystal silicon P+ micro-heaters platforms, capable of measuring gas concentrations down to 0.1 ppm. We have integrated a thin tungsten molybdenum oxide layer as a sensing material with a foundry-standard SOI CMOS micro-hotplate and tested this to NO2. We believe these devices have the potential for use as robust, very low power consumption, low cost gas sensors. © 2011 American Institute of Physics.

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Lancifodilactone G (1), a novel, highly oxygenated nortriterpenoid featuring a partial enol structure and a spirocyclic moiety, was isolated from the medicinal plant Schisandra lancifolia. Its structure and stereochemistry were determined from extensive one- and two-dimensional NMR and mass spectral data, coupled with single-crystal X-ray analysis. Compound 1 exerted minimal cytotoxicity against C8166 cells (CC50 > 200 mu g/mL) and showed anti-HIV activity with EC50 = 95.47 +/- 14.19 mu g/mL and a selectivity index in the range of 1.82-2.46.

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Lancifodilactone F (1), possessing an unprecedented rearranged pentanortriterpenoid backbone derived from cycloartane, was isolated from the leaves and stems of Schisandra lancifolia (Rehd. et Wils) A. C. Smith. Its structure was established by comprehensive NMR and MS spectroscopic analysis, coupled with single-crystal X-ray experiment. Compound 1 exerted minimal cytotoxicity against C8166 cells (CC50 > 200 mu g/mL) and showed anti-HIV activity with EC50 = 20.69 +/- 3.31 mu g/mL and a selectivity index > 6.62.

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Przewalskin A (1), a novel C-23 terpenoid with a 6/6/7 carbon ring skeleton, was isolated from Salvia przewalskii. Its structure was determined by comprehensive 1D NMR, 2D NMR, and MS spectroscopic analysis and subsequently confirmed by a single-crystal X