Electroabsorption modulator integrated with buried-ridge-stripe dual-core spot-size converter by quantum-well intermixing

A single shallow ridge electroabsorption modulator monolithically integrated with a buried-ridge-stripe dual-core spot-size converter at the input and output port was fabricated by combining quantum-well intermixing and dual-core integration techniques simultaneously, using only a two-step low-pressure metal-organic vapor phase epitaxial process, conventional photolithography, and a chemical wet etching process. The optical insertion loss of the modulator in the on-state and the dc extinction ratio between 0 and -3 V at 1550 nm was -7.5 and 16 dB, respectively. The 3-dB modulation bandwidth was more than 10.0 GHz in electrical-optical response.

Violet electroluminescence of AlInGaN-InGaN multiquantum-well light-emitting diodes: Quantum-confined stark effect and heating effect

Electroluminescence (EL) from AlInGaN-InGaN multiquantum-well violet light-emitting diodes is investigated as a function of forward bias. Two distinct regimes have been identified: 1) quantum-confined Stark effect at low and moderately high forward biases; 2) heating effect at high biases. In the different regimes, the low-temperature EL spectra exhibit different spectral features which are discussed in detail.

Binding energy of a hydrogenic donor impurity in a rectangular parallelepiped-shaped quantum dot: Quantum confinement and Stark effects

We calculate the binding energy of a hydrogenic donor impurity in a rectangular parallelepiped-shaped quantum dot (QD) in the framework of effective-mass envelope-function theory using the plane wave basis. The variation of the binding energy with edge length, position of the impurity, and external electric field is studied in detail. A finite potential model is adopted in our calculations. Compared with the infinite potential model [C. I. Mendoza , Phys. Rev. B 71, 075330 (2005)], the following results are found: (1) if the impurity is located in the interior of the QD, our results give a smaller binding energy than the infinite potential model; (2) the binding energies are more sensitively dependent on the applied electric field in the finite potential model; (3) the infinite potential model cannot give correct results for a small QD edge length for any location of the impurity in the QD; (4) some degeneracy is lifted when the dot is no longer cubic. (C) 2007 American Institute of Physics.

Enhanced infrared absorption of spatially ordered quantum dot arrays

We have investigated the intersubband absorption for spatially ordered and non-ordered quantum dots (QDs). It is found that the intersubband absorption of spatially ordered QDs is much stronger than that of non-ordered QDs. The enhanced absorption is attributed to the improved size uniformity concurrent with the spatial ordering for the growth condition employed. For the FTIR measurement under normal incidence geometry, using a undoped sample as reference can remove the interference effect due to multiple reflections. (c) 2006 Elsevier B.V. All rights reserved.

Low-threshold high-temperature operation of lambda similar to 7.4 mu m quantum cascade lasers

We report low-threshold high-temperature operation of 7.4 mu m strain-compensated InGaAs/InAlAs quantum cascade lasers (QCLs). For an uncoated 22-mu m-wide and 2-mm-long laser, the low-threshold current densities, i.e. 0.33 kA/cm(2) at 81 K in pulsed mode and 0.64 kA/cm(2) at 84 K in cw mode, are realized. High-temperature operation of uncoated devices, with a high value of 223 K, is achieved in cw mode.

Quantum measurement characteristics of a double-dot single electron transistor

Owing to a few unique advantages, the double-dot single electron transistor has been proposed as an alternative detector for charge states. In this work, we present a further study for its signal-to-noise property, based on a full analysis of the setup configuration symmetry. It is found that the effectiveness of the double-dot detector can approach that of an ideal detector, if the symmetric capacitive coupling is taken into account. The quantum measurement efficiency is also analyzed by comparing the measurement time with the measurement-induced dephasing time.

Energy of a polaron in a wurtzite nitride finite parabolic quantum well

The effects of electron-phonon interaction oil energy levels of a. polaron in a wurtzite nitride finite parabolic quantum well (PQW) are studied by using a modified Lee-Low-Pines variational method. The ground state, first excited state, and transition energy of the polaron in the GaN/Al0.3Ga0.7N wurtzite PQW are calculated by taking account of the influence of confined LO(TO)-like phonon modes and the half-space LO(TO)-like phonon modes and considering the anisotropy of all kinds of phonon modes. The numerical results are given and discussed. The results show that the electron phonon interaction strongly affects the energy levels of the polaron, and the contributions from phonons to the energy of a polaron hi a wurtzite nitride PQW are greater than that in all AlGaAs PQW. This indicates that the electron-phonon interaction in a wurtzite nitride PQW is not negligible.

Hydrogenic impurity in double quantum dots

The ground state binding energy and the average interparticle distances for a hydrogenic impurity in double quantum dots with Gaussian confinement potential are studied by the variational method. The probability density of the electron is calculated, too. The dependence of the binding energy on the impurity position is investigated for GaAs quantum dots. The result shows that the binding energy has a minimum as a function of the distance between the two quantum dots when the impurity is located at the center of one quantum dot or at the center of the edge of one quantum dot. When the impurity is located at the center of the two dots, the binding energy decreases monotonically. (c) 2006 Elsevier B.V. All rights reserved.

Optimization of GaInNAs(Sb)/GaAs quantum wells at 1.3-1.55 mu m grown by molecular beam epitaxy

The InGaNAs(Sb)/(GaNAs)/GaAs quantum wells (QWs) emitting at 1.3-1.55 mu m have been grown by molecular beam epitaxy (MBE). The parameters of the radio frequency (RF) such as RF power and flow rate are optimized to reduce the damages from the ions or energetic species. The growth temperature is carefully controlled to prevent the phase segregation and strain relaxation. The effects of Sb on the wavelength and quality are investigated. The GaNAs barrier is used to extend the wavelength and reduce the strain. A 1.5865 mu m InGaNAs(Sb)/GaNAs SQW edge emitting laser lasing at room temperature at continuous wave operation mode is demonstrated. (c) 2006 Elsevier B.V. All rights reserved.

Fabrication of ultra-low density and long-wavelength emission InAs quantum dots

By optimizing the molecular beam epitaxy growth conditions of self-organized InAs/GaAs quantum dots (QDs), we obtained an ultra-low density system of InAs QDs (4 x 10(6)cm(-2)). Photoluminescence (PL) spectroscopy reveals the emission wavelength at room temperature to be longer than 1300 nm with a GaAs capping layer. (c) 2007 Elsevier B.V. All rights reserved.

Metamorphic growth of 1.25-1.29 mu m InGaAs quantum well lasers on GaAs by molecular beam epitaxy

We demonstrate 1.25-1.29 mu m metamorphic laser diodes grown on GaAs by molecular beam epitaxy (MBE) using an alloy-graded buffer layer (GBL). Use of Be in the GBL is effective to reduce surface/interface roughness and improves optical quality. The RMS surface roughness of the optimized metamorphic laser is only two atomic monolayers for 1 x 1 mu m(2). Cross-sectional transmission electron microscopy (TEM) images confirm that most dislocations are blocked in the GBL. Ridge waveguide lasers with 4 mu m wide ridge were fabricated and characterized. The average threshold current under the pulsed excitation is in 170-200 mA for a cavity length of 0.9-1.5 mm. This value can be further reduced to about 100 mA by high-reflectivity coating. Lasers can work in an ambient temperature up to at least 50 degrees C. (c) 2006 Elsevier B.V. All rights reserved.

Unveiling the morphology of buried In(Ga)As nanostructures by selective wet chemical etching: From quantum dots to quantum rings

The three-dimensional morphology of In(Ga)As nanostructures embedded in a GaAs matrix is investigated by combining atomic force microscopy and removal of the GaAs cap layer by selective wet etching. This method is used to investigate how the morphology of In(Ga)As quantum dots changes upon GaAs capping and subsequent in situ etching with AsBr3. A wave function calculation based on the experimentally determined morphologies suggests that quantum dots transform into quantum rings during in situ etching. (c) 2007 American Institute of Physics.

Intrasubband and intersubband transitions in GaAs/AlxGa1-xAs multiple quantum wells

Infrared absorption in GaAs/AlxGa1-xAs multiple quantum wells is investigated using a polarizer. Two main peaks, with wave numbers 723 and 1092 cm(-1), are observed. The peak with wave number 1092 cm(-1) corresponds to the 0 -> 1 intersubband transition, while the other one corresponds to the intrasubband transition. The polarized absorbance is one order of magnitude higher than the unpolarized one. The authors attribute the intrasubband transition to the plasma oscillation in the quantum wells.

Extremely low density InAs quantum dots with no wetting layer

Extremely low density InAs quantum dots (QDs) are grown by molecular beam droplet epitaxy, The gallium deposition amount is optimized to saturate exactly the excess arsenic atoms present on the GaAs substrate surface during growth, and low density InAs/GaAs QDs (4x10(6) cm(-2)) are formed by depositing 0.65 monolayers (ML) of indium. This is much less than the critical deposition thickness (1.7 ML), which is necessary to form InAs/GaAs QDs with the conventional Stranski-Krastanov growth mode. The narrow photoluminescence line-width of about 24 meV is insensitive to cryostat temperatures from 10 K to 250 K. All measurements indicate that there is no wetting layer connecting the QDs.

Electric field tunable electron g factor and high asymmetrical Stark effect in InAs1-xNx quantum dots

The electronic structure, electron g factor, and Stark effect of InAs1-xNx quantum dots are studied by using the ten-band k center dot p model. It is found that the g factor can be tuned to be zero by the shape and size of quantum dots, nitrogen (N) doping, and the electric field. The N doping has two effects on the g factor: the direct effect increases the g factor and the indirect effect decreases it. The Stark effect in quantum ellipsoids is high asymmetrical and the asymmetry factor may be 319. (c) 2007 American Institute of Physics.