Quantum measurement characteristics of a double-dot single electron transistor


Autoria(s): Jiao, HJ (Jiao, HuJun); Li, XQ (Li, Xin-Qi); Luo, JY (Luo, JunYan)
Data(s)

2007

Resumo

Owing to a few unique advantages, the double-dot single electron transistor has been proposed as an alternative detector for charge states. In this work, we present a further study for its signal-to-noise property, based on a full analysis of the setup configuration symmetry. It is found that the effectiveness of the double-dot detector can approach that of an ideal detector, if the symmetric capacitive coupling is taken into account. The quantum measurement efficiency is also analyzed by comparing the measurement time with the measurement-induced dephasing time.

Identificador

http://ir.semi.ac.cn/handle/172111/9490

http://www.irgrid.ac.cn/handle/1471x/64157

Idioma(s)

英语

Fonte

Jiao, HJ (Jiao, HuJun); Li, XQ (Li, Xin-Qi); Luo, JY (Luo, JunYan) .Quantum measurement characteristics of a double-dot single electron transistor ,PHYSICAL REVIEW B,APR 2007,75 (15):Art.No.155333

Palavras-Chave #半导体物理 #TRANSPORT
Tipo

期刊论文