Electric field tunable electron g factor and high asymmetrical Stark effect in InAs1-xNx quantum dots


Autoria(s): Zhang, XW (Zhang, X. W.); Fan, WJ (Fan, W. J.); Li, SS (Li, S. S.); Xia, JB (Xia, J. B.)
Data(s)

2007

Resumo

The electronic structure, electron g factor, and Stark effect of InAs1-xNx quantum dots are studied by using the ten-band k center dot p model. It is found that the g factor can be tuned to be zero by the shape and size of quantum dots, nitrogen (N) doping, and the electric field. The N doping has two effects on the g factor: the direct effect increases the g factor and the indirect effect decreases it. The Stark effect in quantum ellipsoids is high asymmetrical and the asymmetry factor may be 319. (c) 2007 American Institute of Physics.

Identificador

http://ir.semi.ac.cn/handle/172111/9536

http://www.irgrid.ac.cn/handle/1471x/64180

Idioma(s)

英语

Fonte

Zhang, XW (Zhang, X. W.); Fan, WJ (Fan, W. J.); Li, SS (Li, S. S.); Xia, JB (Xia, J. B.) .Electric field tunable electron g factor and high asymmetrical Stark effect in InAs1-xNx quantum dots ,APPLIED PHYSICS LETTERS,APR 9 2007,90 (15):Art.No.153103

Palavras-Chave #半导体物理 #OPTICAL-PROPERTIES
Tipo

期刊论文